APTGL475U120D4G Microsemi Power Products Group, APTGL475U120D4G Datasheet - Page 5

• Manufacturer Part Number: APTGL475U120D4G
• Description: IGBT4 SGL SWITCH 1200V 610A D4
• Manufacturer: Microsemi Power Products Group

Specifications of APTGL475U120D4G

• Igbt Type: Trench and Field Stop
• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.2V @ 15V, 400A
• Current - Collector (ic) (max): 610A
• Current - Collector Cutoff (max): 4mA
• Input Capacitance (cies) @ Vce: 24.6nF @ 25V
• Power - Max: 2082W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: D4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103
5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
180
150
120
90
60
30
0
0.16
0.14
0.12
0.08
0.06
0.04
0.02
0.1
Operating Frequency vs Collector Current
0.00001
0
0
switching
Hard
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.9
0.7
0.5
0.1
0.3
0.05
120
240
0.0001
ZVS
I
C
(A)
360
V
D=50%
R
T
Tc=75°C
ZCS
www.microsemi.com
J
CE
G
=150°C
=1.8 Ω
Diode
480
=600V
Rectangular Pulse Duration in Seconds
0.001
600
Single Pulse
0.01
APTGL475U120D4G
800
600
400
200
0
0
0.1
Forward Characteristic of diode
0.4
T
J
=150°C
0.8
V
1.2
F
1
(V)
T
J
=25°C
1.6
2
10
2.4
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