APTGL120TA120TPG Microsemi Power Products Group, APTGL120TA120TPG Datasheet - Page 4

• Manufacturer Part Number: APTGL120TA120TPG
• Description: IGBT4 PHASE LEG 1200V 140A SP6
• Manufacturer: Microsemi Power Products Group

Specifications of APTGL120TA120TPG

• Igbt Type: Trench and Field Stop
• Configuration: Three Phase
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.15V @ 15V, 100A
• Current - Collector (ic) (max): 140A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 6.2nF @ 25V
• Power - Max: 517W
• Input: Standard
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: SP6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Performance Curve
200
150
100
20
15
10
0.25
0.15
0.05
200
150
100
Switching Energy Losses vs Gate Resistance
50
5
0
0.3
0.2
0.1
50
0.00001
0
0
0
0
5
0
V
T
V
I
CE
C
J
Output Characteristics (V
GE
= 150°C
= 100A
0.3
0.1
6
0.05
0.9
0.7
0.5
= 600V
T
=15V
Transfert Characteristics
J
=150°C
Gate Resistance (ohms)
10
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
7
1
8
0.0001
T
J
=25°C
V
V
GE
20
CE
9
2
(V)
(V)
Eon
T
10
J
=25°C
T
GE
30
11
J
=150°C
3
=15V)
rectangular Pulse Duration (Seconds)
0.001
Eoff
Err
12
www.microsemi.com
40
13
4
Single Pulse
0.01
APTGL120TA120TPG
200
150
100
240
200
160
120
40
30
20
10
50
80
40
0
0
0
0
0
0
V
V
R
T
Energy losses vs Collector Current
Reverse Bias Safe Operating Area
CE
GE
J
G
T
= 150°C
V
T
R
0.1
= 7.5 Ω
J
= 600V
GE
J
= 15V
G
=150°C
Err
=7.5Ω
= 150°C
=15V
300
50
Output Characteristics
1
600
I
V
V
V
C
100
GE
CE
CE
(A)
2
=19V
1
(V)
(V)
900
IGBT
150
1200
3
Eon
V
V
GE
Eoff
GE
=15V
=9V
1500
10
200
4
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