APTGL120TA120TPG Microsemi Power Products Group, APTGL120TA120TPG Datasheet - Page 5

• Manufacturer Part Number: APTGL120TA120TPG
• Description: IGBT4 PHASE LEG 1200V 140A SP6
• Manufacturer: Microsemi Power Products Group

Specifications of APTGL120TA120TPG

• Igbt Type: Trench and Field Stop
• Configuration: Three Phase
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.15V @ 15V, 100A
• Current - Collector (ic) (max): 140A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 6.2nF @ 25V
• Power - Max: 517W
• Input: Standard
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: SP6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103
5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
180
150
120
90
60
30
0
0.6
0.5
0.4
0.3
0.2
0.1
0.00001
Operating Frequency vs Collector Current
0
0
switching
0.9
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.7
0.5
0.3
0.1
0.05
Hard
25
50
0.0001
ZCS
I
C
75
(A)
100
ZVS
V
D=50%
R
T
Tc=75°C
J
CE
G
Diode
=150°C
=7.5 Ω
=600V
125
Rectangular Pulse Duration in Seconds
0.001
150
Single Pulse
www.microsemi.com
0.01
APTGL120TA120TPG
200
150
100
50
0
0
0.1
Forward Characteristic of diode
0.4
T
J
0.8
=150°C
V
F
1.2
(V)
1
1.6
T
J
=25°C
2
10
2.4
5 - 5