IXSN80N60BD1 IXYS, IXSN80N60BD1 Datasheet - Page 4

• Manufacturer Part Number: IXSN80N60BD1
• Description: IGBT 600V SCSOA SOT-227B
• Manufacturer: IXYS

Specifications of IXSN80N60BD1

• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.5V @ 15V, 80A
• Current - Collector (ic) (max): 160A
• Current - Collector Cutoff (max): 200µA
• Input Capacitance (cies) @ Vce: 6.6nF @ 25V
• Power - Max: 420W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Channel Type: N
• Collector-emitter Voltage: 600V
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -55
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Vces, (v): 600
• Ic25, Tc=25°c, Igbt, (a): 100
• Ic90, Tc=90°c, Igbt, (a): 80
• Vce(sat), Max, Tj=25°c, Igbt, (v): 2.5
• Tfi, Typ, Igbt, (ns): 180
• Eoff, Typ, Tj=125°c, Igbt, (mj): 10
• Rthjc, Max, Igbt, (k/w): 0.3
• Package Style: SOT-227B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
325
300
275
250
225
200
175
150
125
100
90
80
70
60
50
40
30
20
10
11
10
75
0
9
8
7
6
5
4
3
2
1
0
40
I
0
0
C
= 40A
T
R
R
V
V
J
I
GE
CE
G
G
C
Fig. 11. Dependence of Turn-off
= -40ºC
40
Fig. 9. Dependence of Turn-Off
2
125ºC
= 80A
= 2.7Ω
= 10Ω - - - -
= 480V
Fig. 7. Transconductance
= 15V
25ºC
60
Sw itching Tim e on R
4
80
Energy Loss on I
80
T
6
I
120
J
I
C
R
= 25ºC
C
- Amperes
T
G
- Amperes
J
8
- Ohms
= 125ºC
100
160
10
4,850,072
4,835,592
200
120
12
t
t
T
V
V
C
d(off)
fi
J
GE
CE
240
G
= 125ºC
- - - - - -
4,931,844
4,881,106
14
= 480V
= 15V
140
I
280
C
16
= 160A
5,034,796
5,017,508
160
320
18
5,049,961
5,063,307
275
250
225
200
175
150
125
100
11
10
75
14
12
10
9
8
7
6
5
4
3
2
1
0
8
6
4
2
0
5,237,481
5,187,117
25
40
2
T
V
V
R
R
V
V
35
Fig. 12. Dependence of Turn-off
Fig. 10. Dependence of Turn-off
J
Fig. 8. Dependence of Turn-off
GE
CE
GE
CE
t
t
R
V
V
Energy Loss on Tem perature
G
G
= 125ºC
d(off)
fi
5,381,025
GE
CE
5,486,715
4
G
60
= 480V
= 2.7Ω
= 10Ω - - - -
= 15V
= 480V
= 15V
45
- - - - - -
= 2.7Ω
= 480V
= 15V
Sw itching Tim e on I
T
Energy Loss on R
J
55
6
- Degrees Centigrade
80
6,306,728B1
6,404,065B1
I
C
R
65
- Amperes
G
8
- Ohms
100
75
T
6,162,665
6,259,123B1 6,306,728B1 6,683,344
J
10
85
= 25ºC
IXSN 80N60BD1
T
120
I
J
C
I
I
I
C
C
= 125ºC
I
I
95
C
G
= 160A
C
C
12
= 80A
= 40A
= 160A
C
= 40A
= 80A
6,534,343
105 115 125
140
14
6,583,505
160
16