IXSN80N60BD1 IXYS, IXSN80N60BD1 Datasheet - Page 6

• Manufacturer Part Number: IXSN80N60BD1
• Description: IGBT 600V SCSOA SOT-227B
• Manufacturer: IXYS

Specifications of IXSN80N60BD1

• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.5V @ 15V, 80A
• Current - Collector (ic) (max): 160A
• Current - Collector Cutoff (max): 200µA
• Input Capacitance (cies) @ Vce: 6.6nF @ 25V
• Power - Max: 420W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Channel Type: N
• Collector-emitter Voltage: 600V
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -55
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Vces, (v): 600
• Ic25, Tc=25°c, Igbt, (a): 100
• Ic90, Tc=90°c, Igbt, (a): 80
• Vce(sat), Max, Tj=25°c, Igbt, (v): 2.5
• Tfi, Typ, Igbt, (ns): 180
• Eoff, Typ, Tj=125°c, Igbt, (mj): 10
• Rthjc, Max, Igbt, (k/w): 0.3
• Package Style: SOT-227B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
Fig. 17. Forward current I
Fig. 20. Dynamic parameters Q
Fig. 7
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
0.0001
I
0.001
F
Z
K
0.01
K/W
thJC
160
140
120
100
f
2.0
1.5
1.0
0.5
0.0
0.1
0.00001
A
80
60
40
20
0
1
0
0
versus T
Transient thermal resistance junction to case
T
40
T
T
VJ
VJ
VJ
I
RM
Q
=150°C
= 25°C
=100°C
VJ
r
1
0.0001
80
T
F
VJ
versus V
V
120
F
2
r
°C
, I
0.001
RM
V
160
F
4,850,072
4,835,592
Q
t
r
Fig. 18. Reverse recovery charge Q
rr
Fig. 21. Recovery time t
4000
3000
2000
1000
140
130
120
110
100
nC
ns
90
80
4,931,844
4,881,106
0
100
0.01
0
T
V
VJ
R
versus -di
= 100°C
= 300V
200
5,034,796
5,017,508
400
I
I
I
F
F
F
=120A
= 60A
= 30A
F
/dt
0.1
I
I
I
F
F
F
5,049,961
5,063,307
=120A
= 60A
= 30A
-di
600
F
-di
/dt
T
V
rr
VJ
t
F
R
versus -di
/dt
= 100°C
= 300V
A/µs
s
800
DSEP 2x61-06A
A/µs
5,237,481
5,187,117
1000
1000
1
F
/dt
r
5,381,025
5,486,715
I
V
RM
Fig. 19. Peak reverse current I
Constants for Z
FR
Fig. 22. Peak forward voltage V
t
fr
80
60
40
20
20
15
10
A
versus di
1
2
3
4
V
0
5
0
i
6,306,728B1
6,404,065B1
0
0
t
T
I
T
V
fr
F
VJ
VJ
R
= 100°C
= 60A
= 100°C
= 300V
200
versus -di
200
F
/dt
R
0.3073
0.3533
0.0887
0.1008
I
I
I
F
F
F
thi
=120A
= 60A
= 30A
6,162,665
6,259,123B1 6,306,728B1 6,683,344
400
400
thJC
(K/W)
IXSN 80N60BD1
calculation:
F
/dt
600
600
di
-di
6,534,343
V
F
/dt
F
FR
/dt
A/µs
A/µs
800
800
t
0.0055
0.0092
0.0007
0.0399
i
(s)
RM
1000
1000
6,583,505
FR
1.6
1.2
0.8
0.4
0.0
and
µs
t
fr