CPV363M4K Vishay, CPV363M4K Datasheet - Page 2

• Manufacturer Part Number: CPV363M4K
• Description: IGBT SIP MODULE 600V 6A IMS-2
• Manufacturer: Vishay

Specifications of CPV363M4K

• Configuration: Three Phase Inverter
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2V @ 15V, 11A
• Current - Collector (ic) (max): 11A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 0.74nF @ 30V
• Power - Max: 36W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Through Hole
• Package / Case: 19-SIP (13 Leads), IMS-2
• Channel Type: N
• Collector-emitter Voltage: 600V
• Gate To Emitter Voltage (max): ±20V
• Mounting: Through Hole
• Operating Temperature (min): -40C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Automotive
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Igbt Type: -
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant, Not Compliant
• Other names: *CPV363M4K; VS-CPV363M4K; VS-CPV363M4K; VSCPV363M4K; VSCPV363M4K

CPV363M4K
Electrical Characteristics @ T
Switching Characteristics @ T
E
d i
Notes:
V
V
V
g
I
V
I
Q
Q
Q
t
t
t
t
E
E
t
t
t
t
t
E
C
C
C
t
I
Q
V
CES
GES
V
d(on)
d(off)
f
ts
sc
d(on)
d(off)
f
rr
r
r
rr
fe
on
off
ts
oes
(BR)CES
CE(on)
GE(th)
g
ge
ies
res
(rec)M
(BR)CES
FM
gc
rr
GE(th)
Repetitive rating; V
by max. junction temperature. ( See fig. 20)
/ dt
/ T
/ T
J
J
Collector-to-Emitter Breakdown Voltage
Temp. Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Temp. Coeff. of Threshold Voltage
Forward Transconductance
Zero Gate Voltage Collector Current
Diode Forward Voltage Drop
Gate-to-Emitter Leakage Current
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
Diode Peak Rate of Fall of Recovery
During t
b
GE
Parameter
Parameter
=20V, pulse width limited
J
J
= 25°C (unless otherwise specified)
= 25°C (unless otherwise specified)
Min. Typ. Max. Units
Min. Typ. Max. Units
600
––– 0.45 –––
––– 1.72 2.10
––– 2.00 –––
––– 1.60 –––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
––– 0.28 –––
––– 0.10 –––
––– 0.39 0.50
–––
–––
–––
–––
––– 0.60 –––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
3.0
3.0
10
Pulse width
V
R
CC
G
= 23 , ( See fig. 19 )
=80%(V
–––
–––
–––
––– 2500
––– ±100
107
–––
161
244
740
100
220
180
120
-13
6.0
1.4
1.3
7.4
9.3
3.5
5.6
61
27
55
24
92
54
24
42
80
80
–––
––– mV/°C V
–––
–––
–––
160
140
–––
–––
–––
–––
–––
–––
–––
–––
120
180
600
–––
–––
250
6.0
1.7
1.6
6.0
CES
91
11
40
10
60
80µs; duty factor
), V
A/µs
V/°C
µA
nA
nC
mJ
mJ
nC
GE
ns
µs
ns
pF
ns
V
V
S
V
A
=20V, L=10µH,
ƒ = 1.0MHz
T
V
V
I
I
I
V
V
V
V
I
I
V
I
V
See Fig. 8
T
I
V
Energy losses include "tail" and
diode reverse recovery.
See Fig. 9, 10, 18
V
V
T
I
V
Energy losses include "tail" and
diode reverse recovery.
V
V
T
T
T
T
T
T
T
C
C
C
C
C
C
C
C
J
J
J
J
GE
GE
CE
CE
CE
GE
GE
GE
CC
J
GE
CC
GE
J
GE
GE
CC
J
J
J
J
= 6.0A, T
= 12A, T
= 6.0A
= 11A
= 12A
= 6A
= 6.0A, V
= 6.0A, V
= 125°C
= 25°C
= 25°C
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= 125°C
= 150°C,
= V
= V
= 0V, I
= 0V, I
= 100V, I
= 0V, V
= 15V, R
= 360V, T
= 15V, R
= 15V, R
= 0V, V
= ±20V
= 0V
= 400V
= 30V
GE
GE
0.1%.
, I
, I
J
C
C
J
CE
CC
CC
= 150°C
C
C
CE
See Fig.
See Fig.
See Fig.
See Fig.
= 150°C
= 1.0mA
= 250µA
G
G
Conditions
Conditions
G
C
= 250µA
= 250µA
J
= 600V, T
= 480V
= 23
= 480V
= 23
= 600V
= 23 , V
= 12A
See Fig.10, 11, 18
= 125°C
14
15
16
17
Pulse width 5.0µs,
single shot.
See Fig. 7
di/dt=200A/µs
See Fig. 2, 5
V
See Fig. 13
CPK
J
GE
= 150°C
I
V
F
R
< 500V
= 15V
= 12A
= 200V