APT40GP60J Microsemi Power Products Group, APT40GP60J Datasheet

IGBT 600V 86A 284W SOT227

APT40GP60J

Manufacturer Part Number
APT40GP60J
Description
IGBT 600V 86A 284W SOT227
Manufacturer
Microsemi Power Products Group
Series
POWER MOS 7®r
Datasheet

Specifications of APT40GP60J

Igbt Type
PT
Configuration
Single
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.7V @ 15V, 40A
Current - Collector (ic) (max)
86A
Current - Collector Cutoff (max)
250µA
Input Capacitance (cies) @ Vce
4.61nF @ 25V
Power - Max
284W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
ISOTOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
APT40GP60JMI
APT40GP60JMI

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
APT40GP60J
Manufacturer:
APT
Quantity:
15 500
The POWER MOS 7
Using Punch Through Technology this IGBT is ideal for many high frequency,
high voltage switching applications and has been optimized for high frequency
switchmode power supplies.
• Low Conduction Loss
• Low Gate Charge
• Ultrafast Tail Current shutoff
MAXIMUM RATINGS
STATIC ELECTRICAL CHARACTERISTICS
Symbol
T
Symbol
V
V
SSOA
BV
V
V
J
GE(TH)
CE(ON)
I
V
I
I
,T
I
I
P
GEM
CES
GES
CES
T
CM
C1
C2
GE
CES
D
L
STG
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Gate-Emitter Voltage Transient
Continuous Collector Current @ T
Continuous Collector Current @ T
Pulsed Collector Current
Switching Safe Operating Area @ T
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
Gate Threshold Voltage (V
Collector-Emitter On Voltage (V
Collector-Emitter On Voltage (V
Collector Cut-off Current (V
Collector Cut-off Current (V
Gate-Emitter Leakage Current (V
POWER MOS 7
®
IGBT is a new generation of high voltage power IGBTs.
1
CE
CE
CE
APT Website - http://www.advancedpower.com
@ T
= V
= 600V, V
= 600V, V
GE
GE
• 100 kHz operation @ 400V, 25A
• 200 kHz operation @ 400V, 16A
• SSOA rated
C
C
C
GE
GE
= 25°C
J
= 15V, I
= 15V, I
= 25°C
= 110°C
, I
= 150°C
= ±20V)
C
= 1mA, T
GE
GE
GE
®
C
C
= 0V, I
= 0V, T
= 0V, T
IGBT
= 40A, T
= 40A, T
j
C
= 25°C)
j
j
= 25°C)
= 125°C)
= 250µA)
j
j
= 25°C)
= 125°C)
All Ratings: T
2
2
C
= 25°C unless otherwise specified.
APT40GP60J
MIN
600
3
160A @ 600V
APT40GP60J
-55 to 150
ISOTOP
TYP
4.5
2.2
2.1
600
±20
±30
160
284
300
86
40
®
±100
G
2500
MAX
250
2.7
6
"UL Recognized"
600V
Amps
Watts
UNIT
UNIT
Volts
Volts
µA
nA
°C
C
E

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APT40GP60J Summary of contents

Page 1

... 600V 0V 25° 600V 0V 125° ±20V) GE APT Website - http://www.advancedpower.com APT40GP60J ISOTOP ® 25°C unless otherwise specified. C APT40GP60J 600 ±20 ± 160 160A @ 600V 284 -55 to 150 300 MIN TYP MAX 600 3 4.5 6 2.2 2.7 2.1 250 2 2500 ±100 600V C " ...

Page 2

... 40A +25° Inductive Switching (125°C) V (Peak) = 400V 15V 40A +125° test circuit. (See Figures 21, 22.) on2 APT40GP60J MIN TYP MAX 4610 395 = 25V 25 7.5 135 30 40 160 600V 385 644 352 450 385 972 615 950 MIN TYP MAX ...

Page 3

... GATE CHARGE (nC) FIGURE 4, Gate Charge 3 15V. 250µs PULSE TEST <0.5 % DUTY CYCLE 3 I 80A C = 2.5 I 40A 20A C = 1.5 1 0.5 0 -50 - 100 T , Junction Temperature (°C) J FIGURE 6, On State Voltage vs Junction Temperature 120 100 -50 - 100 125 150 T , CASE TEMPERATURE (°C) C APT40GP60J 3 140 125 ...

Page 4

... I , COLLECTOR TO EMITTER CURRENT (A) CE FIGURE 14, Turn Off Energy Loss vs Collector Current 3000 2500 2000 1500 E off 40A 1000 20A 500 E off FIGURE 16, Switching Energy Losses vs Junction Temperature APT40GP60J = V 15V,T =125° =10V,T =125° 15V,T =25° 10V,T =25° 400V = 100 ...

Page 5

... RECTANGULAR PULSE DURATION (SECONDS) 210 100 0.0107F 50 0.149F ° 125 C 1.22F J ° 400V COLLECTOR CURRENT (A) C Figure 20, Operating Frequency vs Collector APT40GP60J 100 200 300 400 500 600 700 , COLLECTOR TO EMITTER VOLTAGE CE Note Duty Factor Peak 1 min(f max f max1 diss f max 2 ...

Page 6

... W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 4.0 (.157) 0.75 (.030) 4.2 (.165) 0.85 (.033) (2 places) 3.3 (.129) 1.95 (.077) 3.6 (.143) 2.14 (.084) * Emitter * Emitter Dimensions in Millimeters and (Inches) APT40GP60J Gate Voltage 10 d(on) t Collector Current r 90 Collector Voltage 10% V TEST *DRIVER SAME TYPE AS D ...

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