APT40GP60J Microsemi Power Products Group, APT40GP60J Datasheet - Page 5

• Manufacturer Part Number: APT40GP60J
• Description: IGBT 600V 86A 284W SOT227
• Manufacturer: Microsemi Power Products Group
• Series: POWER MOS 7®r

Specifications of APT40GP60J

• Igbt Type: PT
• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 40A
• Current - Collector (ic) (max): 86A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 4.61nF @ 25V
• Power - Max: 284W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: ISOTOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APT40GP60JMI; APT40GP60JMI

TYPICAL PERFORMANCE CURVES
Case temperature
Junction
temp. ( ”C)
10,000
Figure 17, Capacitance vs Collector-To-Emitter Voltage
5,000
1,000
(Watts)
0.45
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
FIGURE 19B, TRANSIENT THERMAL IMPEDANCE MODEL
Power
500
100
V
50
10
CE
0
0
0
10
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
-5
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
10
0.05
0.9
0.7
0.5
0.3
0.1
RC MODEL
20
0.109
0.180
0.151
10
-4
30
40
0.0107F
0.149F
1.22F
SINGLE PULSE
C ies
C oes
C res
10
RECTANGULAR PULSE DURATION (SECONDS)
-3
50
10
-2
210
100
50
10
10
Figure 20, Operating Frequency vs Collector
T
T
D = 50 %
V
R
J
C
CE
G
= 125
= 75
= 5
= 400V
180
160
140
120
100
I
Figure 18, Minimim Switching Safe Operating Area
C
80
60
40
20
°
°
0
C
20
, COLLECTOR CURRENT (A)
C
0
V
CE
10
100
, COLLECTOR TO EMITTER VOLTAGE
-1
30
Current
200
Note:
Peak T J = P DM x Z JC + T C
40
300
Duty Factor D =
t 1
1.0
400
50
t 2
500
t 1
/ t
60
2
600
F
f
f
P
max1
max 2
max
diss
APT40GP60J
700
10
min(f
T
t
E
P
R
J
d (on )
diss
on 2
JC
T
max1
C
P
E
t
cond
0.05
r
, f
off
max 2
t
d(off )
)
t
f