APT65GP60J Microsemi Power Products Group, APT65GP60J Datasheet - Page 2
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APT65GP60J
Manufacturer Part Number
APT65GP60J
Description
IGBT 600V 130A 431W SOT227
Manufacturer
Microsemi Power Products Group
Series
POWER MOS 7®r
Datasheet
1.APT65GP60J.pdf
(6 pages)
Specifications of APT65GP60J
Igbt Type
PT
Configuration
Single
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.7V @ 15V, 65A
Current - Collector (ic) (max)
130A
Current - Collector Cutoff (max)
1mA
Input Capacitance (cies) @ Vce
7.4nF @ 25V
Power - Max
431W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
ISOTOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
APT65GP60J
Manufacturer:
APT
Quantity:
15 500
Company:
Part Number:
APT65GP60JDF2
Manufacturer:
APT
Quantity:
15 500
DYNAMIC CHARACTERISTICS
THERMAL AND MECHANICAL CHARACTERISTICS
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, I
3 See MIL-STD-750 Method 3471.
4 E
5 E
6 E
Symbol
Symbol
SSOA
adding to the IGBT turn-on loss. (See Figure 24.)
loss. A Combi device is used for the clamping diode as shown in the E
APT Reserves the right to change, without notice, the specifications and information contained herein.
V
R
R
C
t
t
t
t
E
E
E
E
C
C
Q
Q
d(on)
d(off)
E
d(on)
d(off)
E
W
Q
on1
on2
off
GEP
on1
on2
on1
on2
oes
t
t
t
t
res
ies
off
off
ge
gc
r
f
r
f
g
JC
JC
T
is the clamped inductive turn-off energy measured in accordance with JEDEC standard JEDS24-1. (See Figures 21, 23.)
is the clamped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current
is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate-to-Emitter Plateau Voltage
Total Gate Charge
Gate-Emitter Charge
Gate-Collector ("Miller ") Charge
Safe Operating Area
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy
Turn-on Switching Energy (Diode)
Turn-off Switching Energy
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy
Turn-on Switching Energy (Diode)
Turn-off Switching Energy
Characteristic
Junction to Case (IGBT)
Junction to Case (DIODE)
Package Weight
ces
includes both IGBT and FRED leakages
3
6
4
4
6
5
5
Inductive Switching (125°C)
15V, L = 100µH,V
Inductive Switching (25°C)
T
J
= 150°C, R
V
GE
Test Conditions
Capacitance
Gate Charge
= 0V, V
T
on2
V
V
V
T
V
V
V
f = 1 MHz
J
CC
CC
CE
I
I
R
I
R
J
GE
GE
GE
C
C
C
= +125°C
test circuit. (See Figures 21, 22.)
= +25°C
G
G
= 65A
= 65A
= 65A
= 300V
= 400V
= 400V
= 15V
= 15V
= 15V
= 5
= 5
G
CE
= 5
CE
= 25V
= 600V
V
GE
=
MIN
250
MIN
7400
1408
1925
1470
TYP
TYP
580
210
605
896
128
605
7.5
35
50
65
30
54
91
65
30
54
91
MAX
MAX
29.2
N/A
.29
APT65GP60J
UNIT
°C/W
UNIT
gm
pF
nC
ns
µ
ns
µ
V
A
J
J