APT65GP60J Microsemi Power Products Group, APT65GP60J Datasheet - Page 5

• Manufacturer Part Number: APT65GP60J
• Description: IGBT 600V 130A 431W SOT227
• Manufacturer: Microsemi Power Products Group
• Series: POWER MOS 7®r

Specifications of APT65GP60J

• Igbt Type: PT
• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 65A
• Current - Collector (ic) (max): 130A
• Current - Collector Cutoff (max): 1mA
• Input Capacitance (cies) @ Vce: 7.4nF @ 25V
• Power - Max: 431W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: ISOTOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TYPICAL PERFORMANCE CURVES
Junction
temp. ( ”C)
10,000
Figure 17, Capacitance vs Collector-To-Emitter Voltage
5,000
1,000
FIGURE 19B, TRANSIENT THERMAL IMPEDANCE MODEL
0.30
0.25
0.20
0.15
0.10
0.05
500
100
V
50
10
CE
0
(Watts)
Power
10
0
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
-5
10
Figure 19A, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
Case temperature
RC MODEL
0.9
0.5
0.05
0.7
0.3
0.1
20
0.069697
0.1363636
0.0833333
10
30
-4
40
RECTANGULAR PULSE DURATION (SECONDS)
0.0174613
0.226556
1.075632
C ies
C oes
SINGLE PULSE
C res
50
10
-3
10
300
250
200
150
100
187
100
Figure 18, Minimim Switching Safe Operating Area
-2
50
50
10
0
7
15
0
Figure 20, Operating Frequency vs Collector
V
T
T
D = 50 %
V
R
CE
J
C
CE
G
= 125
= 75
100
= 5
25
, COLLECTOR TO EMITTER VOLTAGE
= 400V
I
C
°
°
, COLLECTOR CURRENT (A)
C
C
F
f
f
P
35
max1
max 2
200
max
diss
Note:
45
T
min(f
t
300
P
E
Peak T J = P DM x Z JC + T C
J
R
d (on )
10
diss
on 2
Current
Duty Factor D =
JC
-1
T
55
max1
C
P
400
E
t
cond
r
0.05
off
t 1
, f
65
max 2
t
d(off )
t 2
500
)
75
t 1
t
/ t
600
f
2
85
APT65GP60J
1.0
700
95