APTGF50DDA60T3G Microsemi Power Products Group, APTGF50DDA60T3G Datasheet - Page 4
APTGF50DDA60T3G
Manufacturer Part Number
APTGF50DDA60T3G
Description
IGBT MODULE NPT BOOST CHOP SP3
Manufacturer
Microsemi Power Products Group
Datasheet
1.APTGF50DDA60T3G.pdf
(6 pages)
Specifications of APTGF50DDA60T3G
Igbt Type
NPT
Configuration
Dual Boost Chopper
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.45V @ 15V, 50A
Current - Collector (ic) (max)
65A
Current - Collector Cutoff (max)
250µA
Input Capacitance (cies) @ Vce
2.2nF @ 25V
Power - Max
250W
Input
Standard
Ntc Thermistor
Yes
Mounting Type
Chassis Mount
Package / Case
SP3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Typical Performance Curve
150
125
100
150
100
75
50
25
50
0
0
8
7
6
5
4
3
2
1
0
1.20
1.10
1.00
0.90
0.80
0.70
0
6
0
250µs Pulse Test
< 0.5% Duty cycle
250µs Pulse Test
< 0.5% Duty cycle
On state Voltage vs Gate to Emitter Volt.
V
-50
1
CE
Output characteristics (V
Breakdown Voltage vs Junction Temp.
, Collector to Emitter Voltage (V)
V
V
GE
GE
2
T
8
-25
, Gate to Emitter Voltage (V)
J
, Gate to Emitter Voltage (V)
, Junction Temperature (°C)
Transfer Characteristics
1
T
J
3
=25°C
0
10
4
T
J
=125°C
25
5
2
T
250µs Pulse Test
< 0.5% Duty cycle
J
T
= 25°C
J
=-55°C
12
6
50
7
GE
T
75
J
=15V)
3
=-55°C
T
T
14
J
8
=25°C
J
Ic=100A
=125°C
Ic=25A
Ic=50A
www.microsemi.com
100 125
9
10
4
16
150
100
80
70
60
50
40
30
20
10
18
16
14
12
10
3.5
2.5
1.5
0.5
50
APTGF50DDA60T3G
0
8
6
4
2
0
0
4
3
2
1
0
-50 -25
-50
0
0
DC Collector Current vs Case Temperature
On state Voltage vs Junction Temperature
Ic=100A
Ic=50A
250µs Pulse Test
< 0.5% Duty cycle
I
T
Ic=25A
V
C
J
Output Characteristics (V
25
CE
= 50A
-25
= 25°C
T
, Collector to Emitter Voltage (V)
J
, Junction Temperature (°C)
T
C
, Case Temperature (°C)
50
0
1
0
Gate Charge (nC)
V
25
Gate Charge
75
CE
T
25
=300V
J
=25°C
50
100 125 150 175 200
V
2
CE
250µs Pulse Test
< 0.5% Duty cycle
V
50
=120V
GE
75
= 15V
GE
75
T
T
100 125 150
J
J
=125°C
=10V)
=-55°C
3
V
CE
100
=480V
125
4
4 - 6