APTGF50DDA60T3G Microsemi Power Products Group, APTGF50DDA60T3G Datasheet - Page 6
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APTGF50DDA60T3G
Manufacturer Part Number
APTGF50DDA60T3G
Description
IGBT MODULE NPT BOOST CHOP SP3
Manufacturer
Microsemi Power Products Group
Datasheet
1.APTGF50DDA60T3G.pdf
(6 pages)
Specifications of APTGF50DDA60T3G
Igbt Type
NPT
Configuration
Dual Boost Chopper
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.45V @ 15V, 50A
Current - Collector (ic) (max)
65A
Current - Collector Cutoff (max)
250µA
Input Capacitance (cies) @ Vce
2.2nF @ 25V
Power - Max
250W
Input
Standard
Ntc Thermistor
Yes
Mounting Type
Chassis Mount
Package / Case
SP3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
10000
1000
100
0.6
0.5
0.4
0.3
0.2
0.1
0.00001
0
Capacitance vs Collector to Emitter Voltage
0
0.05
V
0.9
0.5
0.3
0.7
0.1
CE
, Collector to Emitter Voltage (V)
10
Cres
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.0001
20
30
40
0.001
Rectangular Pulse Duration (Seconds)
www.microsemi.com
Coes
Cies
50
Single Pulse
0.01
240
200
160
120
APTGF50DDA60T3G
80
40
0
0
Operating Frequency vs Collector Current
0.1
switching
hard
20
I
C
, Collector Current (A)
40
ZVS
1
60
V
D = 50%
R
T
T
G
J
C
CE
= 125°C
= 75°C
= 2.7Ω
= 400V
80
ZCS
100
10
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