APT50GF120JRDQ3 Microsemi Power Products Group, APT50GF120JRDQ3 Datasheet - Page 2

• Manufacturer Part Number: APT50GF120JRDQ3
• Description: IGBT 1200V 120A 521W SOT227
• Manufacturer: Microsemi Power Products Group

Specifications of APT50GF120JRDQ3

• Igbt Type: NPT
• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3V @ 15V, 75A
• Current - Collector (ic) (max): 120A
• Current - Collector Cutoff (max): 750µA
• Input Capacitance (cies) @ Vce: 5.32nF @ 25V
• Power - Max: 521W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: ISOTOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APT50GF120JRDQ3MI; APT50GF120JRDQ3MI

THERMAL AND MECHANICAL CHARACTERISTICS
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, I
3 See MIL-STD-750 Method 3471.
4 E
5 E
6 E
Symbol
Symbol
V
SSOA
adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode.
loss. (See Figures 21, 22.)
APT Reserves the right to change, without notice, the specifications and information contained herein.
V
Isolation
t
t
t
t
R
R
C
E
E
E
E
C
C
Q
Q
d(on)
d(off)
E
d(on)
d(off)
E
W
on1
on2
off
Q
GEP
on1
on2
on1
on2
θ
θ
oes
t
t
t
t
res
ies
ge
off
off
gc
r
r
f
f
JC
JC
g
T
is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current
is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate-to-Emitter Plateau Voltage
Total Gate Charge
Gate-Emitter Charge
Gate-Collector ("Miller ") Charge
Switching Safe Operating Area
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy
Turn-on Switching Energy (Diode)
Turn-off Switching Energy
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy
Turn-on Switching Energy (Diode)
Turn-off Switching Energy
Characteristic
Junction to Case (IGBT)
Junction to Case (DIODE)
Package Weight
RMS Voltage
ces
includes both IGBT and FRED leakages
(50-60hHz Sinusoidal Wavefomr Ffrom Terminals to Mounting Base for 1 Min.)
3
6
6
4
4
4
55
5
T
15V, L = 100µH,V
Inductive Switching (125°C)
Inductive Switching (25°C)
J
= 150°C, R
V
GE
Test Conditions
Capacitance
Gate Charge
= 0V, V
T
V
V
V
T
V
V
V
R
R
f = 1 MHz
J
CC
CC
CE
I
I
I
J
GE
GE
GE
G
G
C
C
C
= +125°C
= +25°C
= 75A
= 75A
= 1.0Ω
= 75A
= 1.0Ω
= 600V
= 800V
= 800V
G
= 15V
= 15V
= 15V
= 1.0Ω, V
CE
CE
= 25V
= 1200V
GE
=
2500
MIN
225
MIN
14110
5320
7965
9895
4340
7890
6040
10.0
TYP
555
300
495
290
355
410
110
29.2
TYP
50
36
70
65
36
70
MAX
MAX
.24
.56
UNIT
UNIT
°C/W
Volts
nC
pF
µ
µ
gm
ns
ns
V
A
J
J