APT50GF120JRDQ3 Microsemi Power Products Group, APT50GF120JRDQ3 Datasheet - Page 3

• Manufacturer Part Number: APT50GF120JRDQ3
• Description: IGBT 1200V 120A 521W SOT227
• Manufacturer: Microsemi Power Products Group

Specifications of APT50GF120JRDQ3

• Igbt Type: NPT
• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3V @ 15V, 75A
• Current - Collector (ic) (max): 120A
• Current - Collector Cutoff (max): 750µA
• Input Capacitance (cies) @ Vce: 5.32nF @ 25V
• Power - Max: 521W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: ISOTOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APT50GF120JRDQ3MI; APT50GF120JRDQ3MI

FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
FIGURE 7, Threshold Voltage vs. Junction Temperature
1.15
1.10
1.05
1.00
0.95
0.90
0.85
0.80
0.75
0.70
160
140
120
100
160
140
120
100
80
60
40
20
80
60
40
20
0
0
5
4
3
2
1
0
-50 -25
FIGURE 1, Output Characteristics(T
V
0
0
8
CE
V
GE
V
TEST<0.5 % DUTY
V
, COLLECTER-TO-EMITTER VOLTAGE (V)
GE
FIGURE 3, Transfer Characteristics
GE
250µs PULSE
T
T
= 15V
J
J
2
, GATE-TO-EMITTER VOLTAGE (V)
CYCLE
, GATE-TO-EMITTER VOLTAGE (V)
, JUNCTION TEMPERATURE (°C)
= 125°C
T
1
J
T
= 125°C
10
0
J
T
4
= 25°C
J
= 25°C
T
T
25
J
J
2
= -55°C
= -55°C
6
12
50
8
3
75
10
100 125 150
14
4
J
12
= 25°C)
16
14
5
FIGURE 8, DC Collector Current vs Case Temperature
FIGURE 6, On State Voltage vs Junction Temperature
350
300
250
200
150
100
180
160
140
120
100
50
16
14
12
10
80
60
40
20
FIGURE 2, Output Characteristics (T
0
8
6
4
2
0
5
4
3
2
1
0
0
-50
V
0
0
0
CE
T
<0.5 % DUTY CYCLE
I
250µs PULSE TEST
C
J
, COLLECTER-TO-EMITTER VOLTAGE (V)
= 25°C
= 75A
-25
100
V
25
T
5
GE
T
C
J
= 15V.
, Junction Temperature (°C)
, CASE TEMPERATURE (°C)
FIGURE 4, Gate Charge
0
V
GATE CHARGE (nC)
15V
200
CE
10
50
V
25
= 600V
CE
13V
= 240V
300
15
75
50
12V
75 100 125 150
11V
400
100
20
V
CE
500
125
25
J
= 960V
9V
= 125°C)
8V
600
150
30