APTGT100DU60TG Microsemi Power Products Group, APTGT100DU60TG Datasheet - Page 4
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APTGT100DU60TG
Manufacturer Part Number
APTGT100DU60TG
Description
IGBT MOD TRENCH DUAL SOURCE SP4
Manufacturer
Microsemi Power Products Group
Datasheet
1.APTGT100DU60TG.pdf
(5 pages)
Specifications of APTGT100DU60TG
Igbt Type
Trench and Field Stop
Configuration
Dual, Common Source
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
1.9V @ 15V, 100A
Current - Collector (ic) (max)
150A
Current - Collector Cutoff (max)
250µA
Input Capacitance (cies) @ Vce
6.1nF @ 25V
Power - Max
340W
Input
Standard
Ntc Thermistor
Yes
Mounting Type
Chassis Mount
Package / Case
SP4
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Typical Performance Curve
200
175
150
125
100
200
175
150
125
100
8
6
4
2
0
0.5
0.4
0.3
0.2
0.1
Switching Energy Losses vs Gate Resistance
75
50
25
75
50
25
0.00001
0
0
0
0
V
V
I
T
0
C
5
CE
GE
J
= 100A
= 150°C
0.9
= 300V
0.5
=15V
0.7
0.3
0.1
Output Characteristics (V
0.05
T
5
0.5
J
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
6
=150°C
Transfert Characteristics
Gate Resistance (ohms)
Eon
T
T
J
J
=125°C
7
10
=125°C
T
1
J
0.0001
=25°C
V
8
V
T
CE
15
T
1.5
J
GE
=25°C
J
=25°C
(V)
(V)
Eoff
T
9
J
=25°C
20
2
10
Eon
GE
T
J
=15V)
=150°C
Rectangular Pulse Duration in Seconds
0.001
2.5
Er
25
11
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Single Pulse
30
3
12
IGBT
0.01
250
200
150
100
200
175
150
125
100
7
6
5
4
3
2
1
0
50
APTGT100DU60TG
75
50
25
0
0
0
0
0
V
V
R
T
J
CE
GE
G
V
T
R
T
= 150°C
Reverse Bias Safe Operating Area
Energy losses vs Collector Current
25
= 3.3Ω
J
GE
G
J
= 300V
= 15V
0.1
=150°C
100
=3.3Ω
= 150°C
0.5
=15V
50
200
Output Characteristics
1
75
300 400 500 600 700
V
1.5
I
C
GE
100 125 150 175 200
V
V
(A)
=19V
CE
CE
1
(V)
(V)
2
V
GE
2.5
=15V
Eoff
V
GE
V
=13V
GE
3
=9V
Eon
Er
10
3.5
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