APTGT100DU60TG Microsemi Power Products Group, APTGT100DU60TG Datasheet - Page 5
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APTGT100DU60TG
Manufacturer Part Number
APTGT100DU60TG
Description
IGBT MOD TRENCH DUAL SOURCE SP4
Manufacturer
Microsemi Power Products Group
Datasheet
1.APTGT100DU60TG.pdf
(5 pages)
Specifications of APTGT100DU60TG
Igbt Type
Trench and Field Stop
Configuration
Dual, Common Source
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
1.9V @ 15V, 100A
Current - Collector (ic) (max)
150A
Current - Collector Cutoff (max)
250µA
Input Capacitance (cies) @ Vce
6.1nF @ 25V
Power - Max
340W
Input
Standard
Ntc Thermistor
Yes
Mounting Type
Chassis Mount
Package / Case
SP4
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
120
100
0.00001
80
60
40
20
0
0
Operating Frequency vs Collector Current
0
0.5
0.3
0.9
0.1
0.7
switching
0.05
ZCS
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Hard
25
50
0.0001
ZVS
I
C
75
(A)
100
V
D=50%
R
T
T
J
c
CE
G
=150°C
=85°C
=3.3Ω
=300V
0.001
Rectangular Pulse Duration in Seconds
125
Single Pulse
150
www.microsemi.com
0.01
200
175
150
125
100
APTGT100DU60TG
75
50
25
0
0
0.1
Forward Characteristic of diode
T
0.4
J
=150°C
T
0.8
J
=125°C
V
1.2
F
1
(V)
T
J
Diode
=25°C
1.6
2
10
2.4
5 - 5