APTGV100H60T3G Microsemi Power Products Group, APTGV100H60T3G Datasheet - Page 5

• Manufacturer Part Number: APTGV100H60T3G
• Description: IGBT NPT BST CHOP FULL BRDG SP3
• Manufacturer: Microsemi Power Products Group

Specifications of APTGV100H60T3G

• Igbt Type: NPT, Trench and Field Stop
• Configuration: Full Bridge Inverter
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.9V @ 15V, 100A
• Current - Collector (ic) (max): 150A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 6.1nF @ 25V
• Power - Max: 340W
• Input: Standard
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: SP3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol Characteristic
Torque
V
T
Wt
T
T
ISOL
STG
C
J
Tj=175°C for Trench & Field Stop IGBT
4. Package characteristics
5. SP3 Package outline (dimensions in mm)
6. Top switches curves
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
6.1 Top Trench + Field Stop IGBT
200
175
150
125
100
75
50
25
0
0
See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com
Output Characteristics (V
0.5
T
J
=125°C
28
T
1
1
J
=25°C
V
T
CE
J
1.5
=25°C
(V)
2
GE
T
J
=15V)
=150°C
2.5
www.microsemi.com
3
To heatsink
17
12
®
typical performance curves
200
175
150
125
100
75
50
25
APTGV100H60T3G
0
0
T
M4
J
= 150°C
0.5
1
Output Characteristics
2500
Min
-40
-40
-40
2.5
1.5
V
GE
V
=19V
CE
(V)
2
Typ
V
GE
2.5
=15V
V
GE
V
=13V
GE
Max
150*
125
100
110
3
4.7
=9V
3.5
Unit
N.m
°C
V
g
5 - 9