APTGV100H60T3G Microsemi Power Products Group, APTGV100H60T3G Datasheet - Page 8

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APTGV100H60T3G

Manufacturer Part Number
APTGV100H60T3G
Description
IGBT NPT BST CHOP FULL BRDG SP3
Manufacturer
Microsemi Power Products Group
Datasheet

Specifications of APTGV100H60T3G

Igbt Type
NPT, Trench and Field Stop
Configuration
Full Bridge Inverter
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
1.9V @ 15V, 100A
Current - Collector (ic) (max)
150A
Current - Collector Cutoff (max)
250µA
Input Capacitance (cies) @ Vce
6.1nF @ 25V
Power - Max
340W
Input
Standard
Ntc Thermistor
Yes
Mounting Type
Chassis Mount
Package / Case
SP3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
80
60
40
20
16
12
35
30
25
20
15
8
6
4
2
0
0
8
4
0
Switching Energy Losses vs Gate Resistance
25
Turn-On Energy Loss vs Collector Current
25
0
0
V
R
CE
G
V
Turn-On Delay Time vs Collector Current
Current Rise Time vs Collector Current
V
T
CE
= 5Ω
J
I
GE
V
R
= 400V
= 125°C
CE
I
I
CE
CE
CE
G
= 400V
25
= 15V
, Collector to Emitter Current (A)
= 5Ω
, Collector to Emitter Current (A)
, Collector to Emitter Current (A)
50
= 400V
10
50
T
V
Gate Resistance (Ohms)
J
=125°C,
GE
=15V
50
75
20
75
75
T
Eon, 180A
V
GE
J
=125°C
=15V,
100
100
30
V
GE
100
= 15V
Tj = 25°C
V
R
CE
G
T
V
= 5Ω
J
GE
Eon, 45A
= 400V
Eon, 90A
Eoff, 45A
125
=25°C,
125
Eoff, 180A
Eoff, 90A
40
=15V
125
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150
150
150
50
250
200
150
100
250
200
150
100
80
60
40
20
50
50
6
5
4
3
2
1
0
APTGV100H60T3G
0
0
25
0
Turn-Off Energy Loss vs Collector Current
25
0
Turn-Off Delay Time vs Collector Current
Current Fall Time vs Collector Current
I
V
V
R
CE
V
I
Reverse Bias Safe Operating Area
V
R
CE
CE
GE
G
I
V
CE
CE
G
CE
, Collector to Emitter Current (A)
= 5Ω
25
CE
, Collector to Emitter Current (A)
= 400V
= 15V
= 5Ω
, Collector to Emitter Voltage (V)
, Collector to Emitter Current (A)
= 400V
50
50
= 400V, V
200
T
J
T
= 125°C
50
J
= 25°C
GE
75
75
= 15V, R
400
75
T
100
100
J
G
= 125°C
V
T
100
= 5Ω
GE
J
=25°C
=15V,
600
V
T
T
J
GE
=125°C
J
= 25°C
=15V,
125
125
125
800
150
150
150
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