APTGT150DH60TG Microsemi Power Products Group, APTGT150DH60TG Datasheet
APTGT150DH60TG
Specifications of APTGT150DH60TG
Related parts for APTGT150DH60TG
APTGT150DH60TG Summary of contents
Page 1
... Gate – Emitter Voltage GE P Maximum Power Dissipation D RBSOA Reverse Bias Safe Operating Area These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTGT150DH60TG V ® I Application • Welding converters VBUS SENSE • Switched Mode Power Supplies • ...
Page 2
... Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr E Reverse Recovery Energy r APTGT150DH60TG = 25°C unless otherwise specified j Test Conditions 600V 25°C V =15V 150A T = 150°C C ...
Page 3
... Storage Temperature Range STG T Operating Case Temperature C Torque Mounting torque Wt Package Weight SP4 Package outline (dimensions in mm) See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com APTGT150DH60TG R T: Thermistor temperature 25 Thermistor value at T ...
Page 4
... Gate Resistance (ohms) maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.35 0.3 0.9 0.25 0.7 0.2 0.5 0.15 0.3 0.1 0.1 0.05 0.05 0 0.00001 0.0001 APTGT150DH60TG =15V) GE 300 T J 250 200 T =150°C J 150 100 2.5 3 (V) Energy losses vs Collector Current ...
Page 5
... Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTGT150DH60TG Forward Characteristic of diode 300 ...