APTGT150DH60TG Microsemi Power Products Group, APTGT150DH60TG Datasheet - Page 5

• Manufacturer Part Number: APTGT150DH60TG
• Description: IGBT MOD TRENCH ASYM BRIDGE SP4
• Manufacturer: Microsemi Power Products Group

Specifications of APTGT150DH60TG

• Igbt Type: Trench and Field Stop
• Configuration: Asymmetrical Bridge
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.9V @ 15V, 150A
• Current - Collector (ic) (max): 225A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 9.2nF @ 25V
• Power - Max: 480W
• Input: Standard
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: SP4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
0.6
0.5
0.4
0.3
0.2
0.1
120
100
0.00001
80
60
40
20
0
0
Operating Frequency vs Collector Current
0
ZCS
0.5
0.3
0.9
0.7
0.1
0.05
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
switching
Hard
ZVS
50
0.0001
I
100
C
(A)
V
D=50%
R
T
T
150
CE
G
J
c
=150°C
=85°C
=3.3Ω
=300V
0.001
Rectangular Pulse Duration in Seconds
www.microsemi.com
Single Pulse
200
Diode
0.01
300
250
200
150
100
APTGT150DH60TG
50
0
0
0.1
Forward Characteristic of diode
T
0.4
J
=150°C
T
0.8
J
=125°C
V
1.2
F
1
(V)
T
J
1.6
=25°C
2
10
2.4
5 - 5