APTGF75DH120TG Microsemi Power Products Group, APTGF75DH120TG Datasheet - Page 4
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APTGF75DH120TG
Manufacturer Part Number
APTGF75DH120TG
Description
IGBT MODULE NPT ASYM BRIDGE SP4
Manufacturer
Microsemi Power Products Group
Datasheet
1.APTGF75DH120TG.pdf
(5 pages)
Specifications of APTGF75DH120TG
Igbt Type
NPT
Configuration
Asymmetrical Bridge
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
3.7V @ 15V, 75A
Current - Collector (ic) (max)
100A
Current - Collector Cutoff (max)
250µA
Input Capacitance (cies) @ Vce
5.1nF @ 25V
Power - Max
500W
Input
Standard
Ntc Thermistor
Yes
Mounting Type
Chassis Mount
Package / Case
SP4
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Typical Performance Curve
150
125
100
150
125
100
35
30
25
20
15
10
0.25
0.15
0.05
75
50
25
Switching Energy Losses vs Gate Resistance
75
50
25
5
0
0.3
0.2
0.1
0
0
0.00001
0
0
0
5
V
V
I
T
C
CE
GE
J
= 75A
0.7
0.5
0.9
0.3
Output Characteristics (V
= 125°C
0.05
0.1
10
= 600V
=15V
6
1
Gate Resistance (ohms)
Transfert Characteristics
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
20
7
2
0.0001
30
V
8
T
V
J
T
CE
GE
=125°C
J
Eon
3
=25°C
Eoff
(V)
(V)
40
T
9
J
=125°C
T
J
=25°C
4
50
10
GE
=15V)
www.microsemi.com
rectangular Pulse Duration (Seconds)
0.001
60
5
11
70
12
6
Single Pulse
0.01
IGBT
175
150
125
100
28
24
20
16
12
150
125
100
75
50
25
8
4
0
75
50
25
0
APTGF75DH120TG
0
0
0
0
V
V
R
T
V
T
R
Reverse Bias Safe Operating Area
T
Energy losses vs Collector Current
J
CE
GE
G
GE
J
G
J
= 125°C
=125°C
= 7.5 Ω
=7.5 Ω
0.1
= 125°C
= 600V
= 15V
=15V
25
300
1
Output Characteristics
50
2
600
I
C
V
75
(A)
CE
V
V
GE
CE
3
(V)
1
=20V
900
(V)
100
4
Eon
1200
125
V
V
V
GE
GE
5
GE
Eoff
=15V
=9V
=12V
1500
150
10
6
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