APTGF75DH120TG Microsemi Power Products Group, APTGF75DH120TG Datasheet - Page 5

• Manufacturer Part Number: APTGF75DH120TG
• Description: IGBT MODULE NPT ASYM BRIDGE SP4
• Manufacturer: Microsemi Power Products Group

Specifications of APTGF75DH120TG

• Igbt Type: NPT
• Configuration: Asymmetrical Bridge
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.7V @ 15V, 75A
• Current - Collector (ic) (max): 100A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 5.1nF @ 25V
• Power - Max: 500W
• Input: Standard
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: SP4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
0.7
0.6
0.5
0.4
0.3
0.2
0.1
100
0.00001
90
80
70
60
50
40
30
20
10
0
0
Operating Frequency vs Collector Current
0
switching
0.05
0.9
0.7
0.5
0.1
0.3
hard
20
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
ZCS
0.0001
40
I
ZVS
C
(A)
60
V
D=50%
R
T
T
J
C
CE
G
=125°C
=75°C
=7.5 Ω
=600V
80
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0.001
rectangular Pulse Duration (Seconds)
100
Single Pulse
Diode
0.01
250
200
150
100
50
APTGF75DH120TG
0
0
0.1
Forward Characteristic of diode
0.5
1
T
V
J
=125°C
1.5
F
(V)
1
T
2
J
=25°C
2.5
10
3
5 - 5