APTGF75DH120TG Microsemi Power Products Group, APTGF75DH120TG Datasheet - Page 5
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APTGF75DH120TG
Manufacturer Part Number
APTGF75DH120TG
Description
IGBT MODULE NPT ASYM BRIDGE SP4
Manufacturer
Microsemi Power Products Group
Datasheet
1.APTGF75DH120TG.pdf
(5 pages)
Specifications of APTGF75DH120TG
Igbt Type
NPT
Configuration
Asymmetrical Bridge
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
3.7V @ 15V, 75A
Current - Collector (ic) (max)
100A
Current - Collector Cutoff (max)
250µA
Input Capacitance (cies) @ Vce
5.1nF @ 25V
Power - Max
500W
Input
Standard
Ntc Thermistor
Yes
Mounting Type
Chassis Mount
Package / Case
SP4
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
0.7
0.6
0.5
0.4
0.3
0.2
0.1
100
0.00001
90
80
70
60
50
40
30
20
10
0
0
Operating Frequency vs Collector Current
0
switching
0.05
0.9
0.7
0.5
0.1
0.3
hard
20
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
ZCS
0.0001
40
I
ZVS
C
(A)
60
V
D=50%
R
T
T
J
C
CE
G
=125°C
=75°C
=7.5 Ω
=600V
80
www.microsemi.com
0.001
rectangular Pulse Duration (Seconds)
100
Single Pulse
Diode
0.01
250
200
150
100
50
APTGF75DH120TG
0
0
0.1
Forward Characteristic of diode
0.5
1
T
V
J
=125°C
1.5
F
(V)
1
T
2
J
=25°C
2.5
10
3
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