APTGF180DU60TG Microsemi Power Products Group, APTGF180DU60TG Datasheet - Page 4
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APTGF180DU60TG
Manufacturer Part Number
APTGF180DU60TG
Description
IGBT MODULE NPT DUAL SP4
Manufacturer
Microsemi Power Products Group
Datasheet
1.APTGF180DU60TG.pdf
(6 pages)
Specifications of APTGF180DU60TG
Igbt Type
NPT
Configuration
Dual, Common Source
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.5V @ 15V, 180A
Current - Collector (ic) (max)
220A
Current - Collector Cutoff (max)
300µA
Input Capacitance (cies) @ Vce
8.6nF @ 25V
Power - Max
833W
Input
Standard
Ntc Thermistor
Yes
Mounting Type
Chassis Mount
Package / Case
SP4
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Typical Performance Curve
600
500
400
300
200
100
600
500
400
300
200
100
0
0
8
7
6
5
4
3
2
1
0
1.20
1.10
1.00
0.90
0.80
0.70
0
6
0
250µs Pulse Test
< 0.5% Duty cycle
250µs Pulse Test
< 0.5% Duty cycle
T
250µs Pulse Test
< 0.5% Duty cycle
On state Voltage vs Gate to Emitter Volt.
V
-50
J
1
CE
= 25°C
Output characteristics (V
V
Breakdown Voltage vs Junction Temp.
, Collector to Emitter Voltage (V)
V
GE
GE
2
T
8
-25
, Gate to Emitter Voltage (V)
J
, Gate to Emitter Voltage (V)
T
1
, Junction Temperature (°C)
Transfer Characteristics
J
=25°C
3
0
10
T
4
J
=125°C
25
T
2
5
J
=-55°C
12
6
50
7
T
GE
T
3
J
75
=-55°C
T
J
Ic=360A
=15V)
Ic=180A
=125°C
J
8
Ic=90A
14
=25°C
100 125
9
4
10
16
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300
250
200
150
100
600
500
400
300
200
100
3.5
2.5
1.5
0.5
50
18
16
14
12
10
4
3
2
1
0
0
0
8
6
4
2
0
-50
-50 -25
DC Collector Current vs Case Temperature
0
0
On state Voltage vs Junction Temperature
APTGF180DU60TG
Output Characteristics (V
Ic=360A
Ic=180A
250µs Pulse Test
< 0.5% Duty cycle
V
I
T
Ic=90A
C
CE
J
= 180A
= 25°C
-25
100
T
, Collector to Emitter Voltage (V)
J
, Junction Temperature (°C)
T
C
, Case Temperature (°C)
0
1
200
0
Gate Charge (nC)
25
V
Gate Charge
T
25
300
CE
J
=25°C
=300V
50
2
250µs Pulse Test
< 0.5% Duty cycle
V
50
400
GE
V
75
= 15V
GE
CE
=120V
=10V)
T
500
75
J
T
100 125 150
=-55°C
3
J
=125°C
V
CE
100
600
=480V
125
4
700
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