APTGF180DU60TG Microsemi Power Products Group, APTGF180DU60TG Datasheet - Page 6
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APTGF180DU60TG
Manufacturer Part Number
APTGF180DU60TG
Description
IGBT MODULE NPT DUAL SP4
Manufacturer
Microsemi Power Products Group
Datasheet
1.APTGF180DU60TG.pdf
(6 pages)
Specifications of APTGF180DU60TG
Igbt Type
NPT
Configuration
Dual, Common Source
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.5V @ 15V, 180A
Current - Collector (ic) (max)
220A
Current - Collector Cutoff (max)
300µA
Input Capacitance (cies) @ Vce
8.6nF @ 25V
Power - Max
833W
Input
Standard
Ntc Thermistor
Yes
Mounting Type
Chassis Mount
Package / Case
SP4
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
100000
10000
1000
0.16
0.14
0.12
0.08
0.06
0.04
0.02
100
0.1
0.00001
Capacitance vs Collector to Emitter Voltage
0
0
V
0.05
0.9
CE
0.5
0.3
0.7
0.1
, Collector to Emitter Voltage (V)
10
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.0001
20
30
40
0.001
Rectangular Pulse Duration (Seconds)
Coes
Cies
Cres
www.microsemi.com
50
Single Pulse
0.01
180
150
120
450
400
350
300
250
200
150
100
90
60
30
50
0
0
40
Operating Frequency vs Collector Current
0
APTGF180DU60TG
switching
V
Hard
Reverse Bias Safe Operating Area
0.1
CE
, Collector to Emitter Voltage (V)
80
200
I
ZVS
C
ZCS
, Collector Current (A)
120
400
1
160
V
D = 50%
R
T
Tc=75°C
C E
G
J
= 125°C
600
= 2.5Ω
= 400V
200
800
10
240
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