APTGF250DA60D3G Microsemi Power Products Group, APTGF250DA60D3G Datasheet - Page 4
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APTGF250DA60D3G
Manufacturer Part Number
APTGF250DA60D3G
Description
IGBT 600V 400A 1250W D3
Manufacturer
Microsemi Power Products Group
Datasheet
1.APTGF250DA60D3G.pdf
(5 pages)
Specifications of APTGF250DA60D3G
Igbt Type
NPT
Configuration
Single
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.45V @ 15V, 300A
Current - Collector (ic) (max)
400A
Current - Collector Cutoff (max)
500µA
Input Capacitance (cies) @ Vce
13nF @ 25V
Power - Max
1250W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
D3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
APTGF250DA60D3G
Manufacturer:
APT
Quantity:
1 000
Part Number:
APTGF250DA60D3G
Quantity:
50
Typical Performance Curve
600
500
400
300
200
100
600
500
400
300
200
100
40
30
20
10
0.12
0.08
0.06
0.04
0.02
Switching Energy Losses vs Gate Resistance
0
0.1
0
0
0.00001
0
0
0
5
V
V
I
T
C
CE
GE
J
= 300A
= 125°C
Output Characteristics (V
= 300V
=15V
0.9
0.3
0.5
0.5
0.1
0.7
6
0.05
5
Transfert Characteristics
Gate Resistance (ohms)
1
7
10
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
T
J
0.0001
=125°C
1.5
V
8
V
CE
GE
15
T
(V)
J
(V)
=25°C
T
2
9
J
=25°C
20
2.5
10
GE
T
=15V)
J
=125°C
25
0.001
rectangular Pulse Duration (Seconds)
3
11
Err
Eoff
Eon
3.5
Single Pulse
30
12
www.microsemi.com
IGBT
0.01
APTGF250DA60D3G
700
600
500
400
300
200
100
30
25
20
15
10
600
500
400
300
200
100
5
0
0
0
0
0
0
V
V
R
T
V
T
R
T
Energy losses vs Collector Current
CE
GE
J
G
GE
J
G
=125°C
J
= 125°C
=6 Ω
= 6 Ω
0.1
Reverse Safe Operating Area
= 125°C
= 300V
=15V
= 15V
100
150
1
Output Characteristics
V
GE
200
=20V
2
I
C
V
300
300
CE
(A)
V
CE
(V)
1
Eon
(V)
3
400
V
GE
450
=15V
V
Eoff
Err
V
GE
500
GE
4
=9V
=12V
600
10
600
5
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