APTGF250DA60D3G Microsemi Power Products Group, APTGF250DA60D3G Datasheet - Page 5
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APTGF250DA60D3G
Manufacturer Part Number
APTGF250DA60D3G
Description
IGBT 600V 400A 1250W D3
Manufacturer
Microsemi Power Products Group
Datasheet
1.APTGF250DA60D3G.pdf
(5 pages)
Specifications of APTGF250DA60D3G
Igbt Type
NPT
Configuration
Single
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.45V @ 15V, 300A
Current - Collector (ic) (max)
400A
Current - Collector Cutoff (max)
500µA
Input Capacitance (cies) @ Vce
13nF @ 25V
Power - Max
1250W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
D3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
APTGF250DA60D3G
Manufacturer:
APT
Quantity:
1 000
Part Number:
APTGF250DA60D3G
Quantity:
50
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103
5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
-0.02
0.22
0.18
0.14
0.06
0.02
70
60
50
40
30
20
10
0.1
0.00001
0
0
Operating Frequency vs Collector Current
0.05
0.9
0.7
0.5
0.1
0.3
switching
hard
100
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
0.0001
I
C
200
(A)
ZVS
ZCS
V
D=50%
R
T
T
300
J
C
CE
G
=125°C
=75°C
=6Ω
=300V
0.001
rectangular Pulse Duration (Seconds)
400
www.microsemi.com
Single Pulse
0.01
APTGF250DA60D3G
600
500
400
300
200
100
0
0
0.1
Forward Characteristic of diode
0.3
0.6
V
T
F
J
1
=125°C
(V)
0.9
Diode
T
J
=25°C
1.2
10
1.5
5 - 5