APTGT450SK60G Microsemi Power Products Group, APTGT450SK60G Datasheet

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APTGT450SK60G

Manufacturer Part Number
APTGT450SK60G
Description
IGBT 600V 550A 1750W SP6
Manufacturer
Microsemi Power Products Group
Datasheet

Specifications of APTGT450SK60G

Igbt Type
Trench and Field Stop
Configuration
Single
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
1.8V @ 15V, 450A
Current - Collector (ic) (max)
550A
Current - Collector Cutoff (max)
500µA
Input Capacitance (cies) @ Vce
37nF @ 25V
Power - Max
1750W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
SP6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Absolute maximum ratings
RBSOA
Symbol
V
V
I
P
I
CM
CES
C
GE
D
G1
E1
Trench + Field Stop IGBT
Collector - Emitter Breakdown Voltage
Continuous Collector Current
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
VBUS
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
G1
E1
Power Module
Buck chopper
Parameter
0/VBUS
Q1
CR2
VBUS
0/VBUS
OUT
OUT
www.microsemi.com
®
T
T
T
T
T
C
C
C
C
j
= 150°C
= 25°C
= 80°C
= 25°C
= 25°C
Application
Features
Benefits
900A @ 550V
Max ratings
AC and DC motor control
Switched Mode Power Supplies
Trench + Field Stop IGBT
Kelvin emitter for easy drive
Very low stray inductance
High level of integration
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
RoHS Compliant
APTGT450SK60G
1750
600
550
450
600
±20
-
-
-
-
-
-
-
-
-
-
V
I
C
CES
Low voltage drop
Low tail current
Switching frequency up to 20 kHz
Soft recovery parallel diodes
Low diode VF
Low leakage current
Avalanche energy rated
RBSOA and SCSOA rated
Symmetrical design
M5 power connectors
= 450A @ Tc = 80°C
= 600V
Unit
W
V
A
V
®
Technology
1 - 5

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APTGT450SK60G Summary of contents

Page 1

... Gate – Emitter Voltage GE P Maximum Power Dissipation D RBSOA Reverse Bias Safe Operating Area These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTGT450SK60G ® Application • AC and DC motor control VBUS • Switched Mode Power Supplies Features • ...

Page 2

... Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr E Reverse Recovery Energy r APTGT450SK60G = 25°C unless otherwise specified j Test Conditions 600V 25°C V =15V 450A T = 150°C C ...

Page 3

... J T Storage Temperature Range STG T Operating Case Temperature C Torque Mounting torque Wt Package Weight SP6 Package outline (dimensions in mm) See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com APTGT450SK60G Min IGBT Diode 2500 -40 -40 -40 To heatsink M6 3 For terminals M5 2 www.microsemi.com ...

Page 4

... Gate Resistance (ohms) maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.1 0.9 0.08 0.7 0.06 0.5 0.04 0.3 0.02 0.1 0.05 0 0.00001 0.0001 APTGT450SK60G =15V) GE 1000 T 800 T =150°C 600 J 400 200 =25° 1.5 2 2.5 0 Energy losses vs Collector Current ...

Page 5

... Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTGT450SK60G 1000 V ...

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