APTGT450SK60G Microsemi Power Products Group, APTGT450SK60G Datasheet - Page 4

• Manufacturer Part Number: APTGT450SK60G
• Description: IGBT 600V 550A 1750W SP6
• Manufacturer: Microsemi Power Products Group

Specifications of APTGT450SK60G

• Igbt Type: Trench and Field Stop
• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.8V @ 15V, 450A
• Current - Collector (ic) (max): 550A
• Current - Collector Cutoff (max): 500µA
• Input Capacitance (cies) @ Vce: 37nF @ 25V
• Power - Max: 1750W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: SP6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Performance Curve
1000
1000
30
20
10
0.08
0.06
0.04
0.02
Switching Energy Losses vs Gate Resistance
800
600
400
200
800
600
400
200
0
0.1
0.00001
0
0
0
0
V
V
I
T
5
0
C
J
CE
GE
= 450A
= 150°C
Output Characteristics (V
= 300V
0.7
0.5
=15V
0.9
0.3
0.1
0.05
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Transfert Characteristics
6
0.5
Gate Resistance (ohms)
T
2
J
=150°C
Eon
T
J
7
=125°C
T
0.0001
T
J
J
1
=125°C
=25°C
V
V
CE
GE
4
T
8
(V)
T
J
(V)
=25°C
J
1.5
=25°C
9
T
Eoff
J
GE
=25°C
6
T
=15V)
J
2
=150°C
Rectangular Pulse Duration in Seconds
0.001
10
Eon
Er
www.microsemi.com
2.5
11
Single Pulse
8
IGBT
0.01
1000
1000
35
30
25
20
15
10
800
600
400
200
800
600
400
200
5
0
0
0
0
APTGT450SK60G
0
0
V
V
R
T
Reverse Bias Safe Operating Area
Energy losses vs Collector Current
J
CE
GE
G
V
T
R
T
= 150°C
= 1Ω
0.1
GE
J
J
= 300V
= 15V
G
=150°C
100 200 300 400 500 600 700
=1Ω
0.5
= 150°C
200
=15V
Output Characteristics
V
1
GE
400
=19V
1.5
I
V
C
V
CE
CE
(A)
600
1
(V)
(V)
2
V
GE
Eoff
=15V
2.5
V
800
GE
V
=13V
GE
Eon
3
=9V
Er
1000
10
3.5
4 - 5