APTGV100H60BTPG Microsemi Power Products Group, APTGV100H60BTPG Datasheet - Page 11
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APTGV100H60BTPG
Manufacturer Part Number
APTGV100H60BTPG
Description
IGBT NPT BST CHOP FULL BRDG SP6P
Manufacturer
Microsemi Power Products Group
Datasheet
1.APTGV100H60BTPG.pdf
(15 pages)
Specifications of APTGV100H60BTPG
Igbt Type
NPT, Trench and Field Stop
Configuration
Boost Chopper, Full Bridge
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
1.9V @ 15V, 100A
Current - Collector (ic) (max)
150A
Current - Collector Cutoff (max)
250µA
Input Capacitance (cies) @ Vce
6.1nF @ 25V
Power - Max
340W
Input
Standard
Ntc Thermistor
Yes
Mounting Type
Chassis Mount
Package / Case
SP6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
8.2 Bottom diode typical performance curves
10000
1000
100
0.35
0.25
0.15
0.05
0.3
0.2
0.1
0.00001
Capacitance vs Collector to Emitter Voltage
0
1.4
1.2
0.8
0.6
0.4
0.2
0.00001
0
1
0
V
0.05
CE
0.9
0.5
0.3
0.7
0.1
Maxim um Effective Transient Therm al Im pedance, Junction to Case vs Pulse Duration
, Collector to Emitter Voltage (V)
10
0.9
0.3
0.7
0.5
0.1
0.05
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.0001
20
0.0001
30
80
70
60
50
40
30
20
10
0
Rectangular Pulse Duration (Seconds)
40
0.0
0.001
0.001
Rectangular Pulse Duration (Seconds)
Forw ard Current vs Forw ard Voltage
Coes
Cies
Cres
www.microsemi.com
V
F
, Anode to Cathode Voltage (V)
Single Pulse
0.5
50
T
J
=1 25°C
Single Pulse
1.0
0.01
0.01
1.5
APTGV100H60BTPG
200
160
120
T
80
40
J
=25°C
0
2.0
20
Operating Frequency vs Collector Current
switching
0.1
Hard
0.1
ZVS
2.5
40
I
C
, Collector Current (A)
60
ZCS
1
1
80
V
D = 50%
R
T
T
J
C
CE
G
= 125°C
= 75°C
= 5Ω
= 400V
100
10
120
10
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