APTGV100H60BTPG Microsemi Power Products Group, APTGV100H60BTPG Datasheet - Page 15

• Manufacturer Part Number: APTGV100H60BTPG
• Description: IGBT NPT BST CHOP FULL BRDG SP6P
• Manufacturer: Microsemi Power Products Group

Specifications of APTGV100H60BTPG

• Igbt Type: NPT, Trench and Field Stop
• Configuration: Boost Chopper, Full Bridge
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.9V @ 15V, 100A
• Current - Collector (ic) (max): 150A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 6.1nF @ 25V
• Power - Max: 340W
• Input: Standard
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: SP6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
9.2 Chopper diode typical performance curves
0.6
0.5
0.4
0.3
0.2
0.1
0.00001
0
0.9
0.3
0.7
0.5
0.1
0.05
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.0001
300
250
200
150
100
50
0
Forw ard Current vs Forw ard Voltage
0.001
Rectangular Pulse Duration (Seconds)
0.0
www.microsemi.com
V
F
, Anode to Cathode Voltage (V)
0.5
Single Pulse
1.0
T
0.01
J
=1 25°C
1.5
APTGV100H60BTPG
T
2.0
J
=25°C
0.1
2.5
1
10
15 - 15