APTGT200A120G Microsemi Power Products Group, APTGT200A120G Datasheet - Page 4

• Manufacturer Part Number: APTGT200A120G
• Description: POWER MODULE IGBT 1200V 200A SP6
• Manufacturer: Microsemi Power Products Group

Specifications of APTGT200A120G

• Igbt Type: Trench and Field Stop
• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.1V @ 15V, 200A
• Current - Collector (ic) (max): 280A
• Current - Collector Cutoff (max): 350µA
• Input Capacitance (cies) @ Vce: 14nF @ 25V
• Power - Max: 890W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: SP6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APTGT200A120GMI; APTGT200A120GMI

Typical Performance Curve
400
300
200
100
400
350
300
250
200
150
100
50
40
30
20
10
0.16
0.14
0.12
0.08
0.06
0.04
0.02
Switching Energy Losses vs Gate Resistance
50
0
0.1
0
0.00001
0
0
0
0
5
V
T
V
I
CE
C
J
GE
0.9
Output Characteristics (V
= 200A
= 125°C
0.7
0.5
0.3
0.1
T
= 600V
=15V
0.05
J
6
=125°C
Transfert Characteristics
4
Gate Resistance (ohms)
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
1
T
J
7
=25°C
0.0001
8
8
V
V
CE
GE
2
(V)
T
(V)
J
=25°C
9
12
Eon
T
10
GE
J
=125°C
T
3
Eoff
J
=15V)
16
Er
=125°C
rectangular Pulse Duration (Seconds)
0.001
11
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Single Pulse
20
12
4
IGBT
0.01
450
400
350
300
250
200
150
100
400
300
200
100
50
40
30
20
10
50
0
0
0
0
0
0
APTGT200A120G
V
T
R
Reverse Bias Safe Operating Area
Energy losses vs Collector Current
V
T
GE
J
T
V
G
R
50 100 150 200 250 300 350 400
0.1
=125°C
CE
=2.7 Ω
J
J
GE
G
Eon
=15V
= 125°C
= 125°C
= 2.7Ω
300
= 600V
= 15V
1
Output Characteristics
V
600
GE
=17V
V
V
CE
I
CE
2
C
(V)
1
(A)
900
(V)
V
GE
1200
3
=15V
V
GE
V
Eon
GE
=13V
=9V
Eoff
Er
1500
10
4
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