APTGT200A120G Microsemi Power Products Group, APTGT200A120G Datasheet - Page 5

• Manufacturer Part Number: APTGT200A120G
• Description: POWER MODULE IGBT 1200V 200A SP6
• Manufacturer: Microsemi Power Products Group

Specifications of APTGT200A120G

• Igbt Type: Trench and Field Stop
• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.1V @ 15V, 200A
• Current - Collector (ic) (max): 280A
• Current - Collector Cutoff (max): 350µA
• Input Capacitance (cies) @ Vce: 14nF @ 25V
• Power - Max: 890W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: SP6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APTGT200A120GMI; APTGT200A120GMI

Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
0.25
0.15
0.05
60
50
40
30
20
10
0
0.3
0.2
0.1
0.00001
0
0
Operating Frequency vs Collector Current
switching
Hard
ZCS
0.9
0.05
0.7
0.5
40
0.1
0.3
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
ZVS
80
120
0.0001
I
C
(A)
160
V
D=50%
R
T
Tc=75°C
J
CE
G
=125°C
200
=2.7Ω
=600V
240
0.001
rectangular Pulse Duration (Seconds)
280
www.microsemi.com
Single Pulse
0.01
400
350
300
250
200
150
100
50
0
0
APTGT200A120G
Forward Characteristic of diode
0.1
0.4
T
J
=125°C
0.8
1.2
V
F
(V)
1
T
J
=25°C
1.6
Diode
T
J
=125°C
2
2.4
10
5 - 5