APTGT150DU170G Microsemi Power Products Group, APTGT150DU170G Datasheet - Page 4

• Manufacturer Part Number: APTGT150DU170G
• Description: IGBT MOD TRENCH DUAL SOURCE SP6
• Manufacturer: Microsemi Power Products Group

Specifications of APTGT150DU170G

• Igbt Type: Trench and Field Stop
• Configuration: Dual, Common Source
• Voltage - Collector Emitter Breakdown (max): 1700V
• Vce(on) (max) @ Vge, Ic: 2.4V @ 15V, 150A
• Current - Collector (ic) (max): 250A
• Current - Collector Cutoff (max): 350µA
• Input Capacitance (cies) @ Vce: 13.5nF @ 25V
• Power - Max: 890W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: SP6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Performance Curve
300
250
200
150
100
300
250
200
150
100
120
100
0.16
0.14
0.12
0.08
0.06
0.04
0.02
50
Switching Energy Losses vs Gate Resistance
50
80
60
40
20
0.1
0
0
0.00001
0
0
0
5
0
T
V
V
I
T
C
Output Characteristics (V
J
0.05
CE
GE
J
0.3
=125°C
= 150A
0.5
0.9
0.7
0.1
6
= 125°C
= 900V
=15V
Transfert Characteristics
5
Gate Resistance (ohms)
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
1
7
10
8
0.0001
T
V
V
J
CE
=25°C
GE
15
9
2
(V)
(V)
T
J
10
=25°C
20
GE
T
www.microsemi.com
T
11
J
3
J
=125°C
=15V)
=125°C
rectangular Pulse Duration (Seconds)
0.001
25
Eon
12
Eoff
Er
Single Pulse
30
13
4
IGBT
0.01
350
300
250
200
150
100
120
100
50
300
250
200
150
100
80
60
40
20
0
50
0
0
APTGT150DU170G
0
0
0
V
T
R
Energy losses vs Collector Current
V
V
R
T
Reverse Bias Safe Operating Area
J
GE
G
CE
GE
J
=125°C
G
=4.7Ω
0.1
T
= 125°C
= 4.7Ω
=15V
J
= 900V
= 15V
50
400
= 125°C
1
Output Characteristics
100
V
800
GE
2
=20V
I
V
C
150
CE
V
(A)
CE
1200
(V)
1
(V)
3
200
V
GE
=15V
1600
V
GE
V
250
=9V
4
GE
Eon
Eoff
=13V
Er
2000
300
10
5
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