APTGT150DU170G Microsemi Power Products Group, APTGT150DU170G Datasheet - Page 5

• Manufacturer Part Number: APTGT150DU170G
• Description: IGBT MOD TRENCH DUAL SOURCE SP6
• Manufacturer: Microsemi Power Products Group

Specifications of APTGT150DU170G

• Igbt Type: Trench and Field Stop
• Configuration: Dual, Common Source
• Voltage - Collector Emitter Breakdown (max): 1700V
• Vce(on) (max) @ Vge, Ic: 2.4V @ 15V, 150A
• Current - Collector (ic) (max): 250A
• Current - Collector Cutoff (max): 350µA
• Input Capacitance (cies) @ Vce: 13.5nF @ 25V
• Power - Max: 890W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: SP6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
0.25
0.15
0.05
20
15
10
5
0
0.3
0.2
0.1
0.00001
0
0
Operating Frequency vs Collector Current
switching
0.05
0.9
hard
0.7
0.5
0.1
0.3
40
ZCS
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
ZVS
80
0.0001
I
C
120
(A)
160
V
D=50%
R
T
T
CE
G
J
C
www.microsemi.com
=125°C
=4.7Ω
=75°C
=900V
200
0.001
rectangular Pulse Duration (Seconds)
Single Pulse
240
0.01
Diode
300
250
200
150
100
50
0
APTGT150DU170G
0
T
Forward Characteristic of diode
0.1
J
=125°C
0.5
1
V
T
F
1.5
J
(V)
=25°C
1
2
T
J
=125°C
2.5
10
3
5 - 5