APTGT300DA170G Microsemi Power Products Group, APTGT300DA170G Datasheet - Page 4
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APTGT300DA170G
Manufacturer Part Number
APTGT300DA170G
Description
IGBT 1700V 400A 1660W SP6
Manufacturer
Microsemi Power Products Group
Datasheet
1.APTGT300DA170G.pdf
(5 pages)
Specifications of APTGT300DA170G
Igbt Type
Trench and Field Stop
Configuration
Single
Voltage - Collector Emitter Breakdown (max)
1700V
Vce(on) (max) @ Vge, Ic
2.4V @ 15V, 300A
Current - Collector (ic) (max)
400A
Current - Collector Cutoff (max)
750µA
Input Capacitance (cies) @ Vce
26.5nF @ 25V
Power - Max
1660W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
SP6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Typical Performance Curve
600
500
400
300
200
100
600
500
400
300
200
100
240
200
160
120
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
Switching Energy Losses vs Gate Resistance
80
40
0
0
0.00001
0
0
0
5
0
T
V
V
I
T
C
Output Characteristics (V
J
0.05
CE
GE
J
0.3
=125°C
= 300A
0.5
0.9
0.7
0.1
6
= 125°C
= 900V
=15V
Transfert Characteristics
3
Gate Resistance (ohms)
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
1
7
8
0.0001
6
T
V
V
J
CE
=25°C
GE
9
2
(V)
(V)
T
J
9
10
=25°C
GE
T
T
11
J
3
J
=125°C
=15V)
=125°C
12
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rectangular Pulse Duration (Seconds)
0.001
Eon
12
Eoff
Er
Single Pulse
15
13
4
0.01
700
600
500
400
300
200
100
240
200
160
120
600
500
400
300
200
100
80
40
0
0
0
APTGT300DA170G
0
0
0
V
T
R
Energy losses vs Collector Current
V
V
R
T
Reverse Bias Safe Operating Area
J
GE
G
CE
GE
J
=125°C
G
=2.2Ω
0.1
T
= 125°C
= 2.2Ω
=15V
J
100
= 900V
= 15V
400
= 125°C
1
Output Characteristics
200
V
800
GE
2
=20V
I
V
C
300
CE
V
(A)
CE
1200
(V)
1
(V)
3
400
V
GE
=15V
1600
IGBT
V
GE
V
500
=9V
4
GE
Eon
Eoff
=13V
Er
2000
600
10
5
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