APTGT300DA170G Microsemi Power Products Group, APTGT300DA170G Datasheet - Page 4

• Manufacturer Part Number: APTGT300DA170G
• Description: IGBT 1700V 400A 1660W SP6
• Manufacturer: Microsemi Power Products Group

Specifications of APTGT300DA170G

• Igbt Type: Trench and Field Stop
• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 1700V
• Vce(on) (max) @ Vge, Ic: 2.4V @ 15V, 300A
• Current - Collector (ic) (max): 400A
• Current - Collector Cutoff (max): 750µA
• Input Capacitance (cies) @ Vce: 26.5nF @ 25V
• Power - Max: 1660W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: SP6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Performance Curve
600
500
400
300
200
100
600
500
400
300
200
100
240
200
160
120
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
Switching Energy Losses vs Gate Resistance
80
40
0
0
0.00001
0
0
0
5
0
T
V
V
I
T
C
Output Characteristics (V
J
0.05
CE
GE
J
0.3
=125°C
= 300A
0.5
0.9
0.7
0.1
6
= 125°C
= 900V
=15V
Transfert Characteristics
3
Gate Resistance (ohms)
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
1
7
8
0.0001
6
T
V
V
J
CE
=25°C
GE
9
2
(V)
(V)
T
J
9
10
=25°C
GE
T
T
11
J
3
J
=125°C
=15V)
=125°C
12
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rectangular Pulse Duration (Seconds)
0.001
Eon
12
Eoff
Er
Single Pulse
15
13
4
0.01
700
600
500
400
300
200
100
240
200
160
120
600
500
400
300
200
100
80
40
0
0
0
APTGT300DA170G
0
0
0
V
T
R
Energy losses vs Collector Current
V
V
R
T
Reverse Bias Safe Operating Area
J
GE
G
CE
GE
J
=125°C
G
=2.2Ω
0.1
T
= 125°C
= 2.2Ω
=15V
J
100
= 900V
= 15V
400
= 125°C
1
Output Characteristics
200
V
800
GE
2
=20V
I
V
C
300
CE
V
(A)
CE
1200
(V)
1
(V)
3
400
V
GE
=15V
1600
IGBT
V
GE
V
500
=9V
4
GE
Eon
Eoff
=13V
Er
2000
600
10
5
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