APTGT300DA170G Microsemi Power Products Group, APTGT300DA170G Datasheet - Page 5

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APTGT300DA170G

Manufacturer Part Number
APTGT300DA170G
Description
IGBT 1700V 400A 1660W SP6
Manufacturer
Microsemi Power Products Group
Datasheet

Specifications of APTGT300DA170G

Igbt Type
Trench and Field Stop
Configuration
Single
Voltage - Collector Emitter Breakdown (max)
1700V
Vce(on) (max) @ Vge, Ic
2.4V @ 15V, 300A
Current - Collector (ic) (max)
400A
Current - Collector Cutoff (max)
750µA
Input Capacitance (cies) @ Vce
26.5nF @ 25V
Power - Max
1660W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
SP6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
20
15
10
0.16
0.14
0.12
0.08
0.06
0.04
0.02
0.1
5
0
0.00001
0
0
Operating Frequency vs Collector Current
switching
0.9
0.05
hard
0.7
0.5
0.1
0.3
80
ZCS
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
160
ZVS
0.0001
I
C
240
(A)
320
V
D=50%
R
T
T
J
C
CE
G
=125°C
=75°C
=2.2Ω
=900V
400
www.microsemi.com
0.001
rectangular Pulse Duration (Seconds)
Single Pulse
480
0.01
Diode
600
500
400
300
200
100
0
APTGT300DA170G
0
T
0.1
Forward Characteristic of diode
J
=125°C
0.5
1
V
T
F
1.5
J
=25°C
(V)
1
2
T
J
=125°C
2.5
10
3
5 - 5

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