APTGT400U170D4G Microsemi Power Products Group, APTGT400U170D4G Datasheet - Page 4

• Manufacturer Part Number: APTGT400U170D4G
• Description: IGBT 1700V 800A 2080W D4
• Manufacturer: Microsemi Power Products Group

Specifications of APTGT400U170D4G

• Igbt Type: Trench and Field Stop
• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 1700V
• Vce(on) (max) @ Vge, Ic: 2.4V @ 15V, 400A
• Current - Collector (ic) (max): 800A
• Current - Collector Cutoff (max): 1mA
• Input Capacitance (cies) @ Vce: 33nF @ 25V
• Power - Max: 2080W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: D4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Performance Curve
800
700
600
500
400
300
200
100
800
700
600
500
400
300
200
100
0.07
0.06
0.05
0.04
0.03
0.02
0.01
500
400
300
200
100
Switching Energy Losses vs Gate Resistance
0
0
0.00001
0
0
0
5
0
V
V
I
T
0.5
C
Output Characteristics (V
J
CE
GE
= 400A
= 125°C
0.05
0.5
0.3
= 900V
0.9
0.7
0.1
=15V
6
Transfert Characteristics
T
J
5
=125°C
Gate Resistance (ohms)
1
7
1.5
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
0.0001
10
V
T
V
CE
J
=25°C
GE
2
8
(V)
T
APT website – http://www.advancedpower.com
J
(V)
=25°C
2.5
15
9
T
GE
J
3
=125°C
=15V)
T
20
rectangular Pulse Duration (Seconds)
J
0.001
=125°C
10
3.5
Eoff
Eon
Er
Single Pulse
25
11
4
IGBT
0.01
1000
800
700
600
500
400
300
200
100
500
400
300
200
100
800
600
400
200
APTGT400U170D4G
0
0
0
0
0
0
Energy losses vs Collector Current
Reverse Bias Safe Operating Area
T
V
V
R
T
V
T
R
CE
GE
J
J
G
100 200 300 400 500 600 700 800
0.1
GE
J
G
= 125°C
=125°C
= 125°C
= 3.6Ω
=3.6Ω
= 900V
= 15V
=15V
400
1
Output Characteristics
800
V
2
GE
I
C
V
=20V
V
(A)
CE
CE
1
1200
(V)
(V)
V
3
GE
=15V
1600
V
GE
V
4
=13V
GE
Eon
=9V
Eoff
Er
2000
10
5
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