APTGT400U170D4G Microsemi Power Products Group, APTGT400U170D4G Datasheet - Page 5

• Manufacturer Part Number: APTGT400U170D4G
• Description: IGBT 1700V 800A 2080W D4
• Manufacturer: Microsemi Power Products Group

Specifications of APTGT400U170D4G

• Igbt Type: Trench and Field Stop
• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 1700V
• Vce(on) (max) @ Vge, Ic: 2.4V @ 15V, 400A
• Current - Collector (ic) (max): 800A
• Current - Collector Cutoff (max): 1mA
• Input Capacitance (cies) @ Vce: 33nF @ 25V
• Power - Max: 2080W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: D4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
25
20
15
10
0.08
0.06
0.04
0.02
0.1
5
0
0.00001
0
0
Operating Frequency vs Collector Current
switching
hard
0.05
0.9
0.7
0.5
0.1
100
0.3
ZCS
200
ZVS
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
0.0001
I
C
(A)
300
APT website – http://www.advancedpower.com
400
V
D=50%
R
T
T
J
C
CE
G
=125°C
=75°C
=3.6 Ω
=900V
500
0.001
rectangular Pulse Duration (Seconds)
600
Single Pulse
0.01
800
700
600
500
400
300
200
100
APTGT400U170D4G
0
0
T
0.1
Forward Characteristic of diode
J
=125°C
0.5
1
V
T
1.5
J
F
=25°C
(V)
1
2
Diode
T
J
=125°C
2.5
10
3
5 - 5