APTGL700U120D4G Microsemi Power Products Group, APTGL700U120D4G Datasheet - Page 4

• Manufacturer Part Number: APTGL700U120D4G
• Description: IGBT 1200V 910A 3000W D4
• Manufacturer: Microsemi Power Products Group

Specifications of APTGL700U120D4G

• Igbt Type: Trench and Field Stop
• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.2V @ 15V, 600A
• Current - Collector (ic) (max): 910A
• Current - Collector Cutoff (max): 4mA
• Input Capacitance (cies) @ Vce: 37.2nF @ 25V
• Power - Max: 3000W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: D4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Performance Curve
1200
120
100
0.06
0.04
0.02
1200
Switching Energy Losses vs Gate Resistance
900
600
300
80
60
40
20
900
600
300
0.00001
0
0
0
0
5
0
V
T
V
Output Characteristics (V
I
CE
C
J
0.3
0.1
0.05
GE
0.9
0.7
0.5
= 150°C
= 600A
6
= 600V
Transfert Characteristics
T
=15V
J
Gate Resistance (ohms)
=150°C
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
2.5
7
1
0.0001
8
T
J
=25°C
V
V
GE
CE
5
9
2
(V)
(V)
Eon
T
10
J
=25°C
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T
7.5
GE
11
J
=150°C
3
=15V)
rectangular Pulse Duration (Seconds)
0.001
Eoff
Er
12
10
13
4
Single Pulse
0.01
IGBT
1200
1440
1200
150
120
APTGL700U120D4G
900
600
300
960
720
480
240
90
60
30
0
0
0
0
0
0
Energy losses vs Collector Current
V
V
R
T
Reverse Bias Safe Operating Area
J
0.1
CE
GE
G
T
= 150°C
V
T
R
= 1.8 Ω
J
= 600V
GE
J
= 15V
G
=150°C
= 150°C
=1.8 Ω
Er
=15V
300
300
Output Characteristics
1
Eon
600
I
C
V
V
V
600
CE
GE
CE
(A)
2
1
=19V
(V)
(V)
900
900
1200
3
V
V
GE
Eoff
GE
=15V
=9V
1200
1500
10
4
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