APTGL700U120D4G Microsemi Power Products Group, APTGL700U120D4G Datasheet - Page 5

• Manufacturer Part Number: APTGL700U120D4G
• Description: IGBT 1200V 910A 3000W D4
• Manufacturer: Microsemi Power Products Group

Specifications of APTGL700U120D4G

• Igbt Type: Trench and Field Stop
• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.2V @ 15V, 600A
• Current - Collector (ic) (max): 910A
• Current - Collector Cutoff (max): 4mA
• Input Capacitance (cies) @ Vce: 37.2nF @ 25V
• Power - Max: 3000W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: D4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103
5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
150
120
90
60
30
0
0.12
0.08
0.06
0.04
0.02
0.1
Operating Frequency vs Collector Current
0.00001
0
0
switching
Hard
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.9
150
0.7
0.5
0.3
0.1
0.05
300
0.0001
ZVS
I
450
C
(A)
600
V
D=50%
R
T
Tc=75°C
ZCS
CE
J
G
=150°C
Diode
=1.8 Ω
www.microsemi.com
=600V
750
Rectangular Pulse Duration in Seconds
0.001
900
Single Pulse
0.01
APTGL700U120D4G
1200
900
600
300
0
0
0.1
Forward Characteristic of diode
0.4
T
J
=150°C
0.8
V
1.2
1
F
(V)
T
J
=25°C
1.6
2
10
2.4
5 - 5