MUBW15-12A6K IXYS, MUBW15-12A6K Datasheet - Page 2

• Manufacturer Part Number: MUBW15-12A6K
• Description: MODULE IGBT CBI E1
• Manufacturer: IXYS
• Type: Converter/Brake/Inv (CBI) IGBT Modulesr

Specifications of MUBW15-12A6K

• Igbt Type: NPT
• Configuration: Three Phase Inverter with Brake
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.4V @ 15V, 15A
• Current - Collector (ic) (max): 19A
• Current - Collector Cutoff (max): 600µA
• Input Capacitance (cies) @ Vce: 0.6nF @ 25V
• Power - Max: 90W
• Input: Three Phase Bridge Rectifier
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: E1
• Mounting Style: Screw
• Product: Power Semiconductor Modules
• Reverse Voltage: 1.6 KV
• Vrrm, Rect 1/3 Ph., (v): 1600
• Idavm, Tc = 80°c, Rect 1/3 Ph., (a): 89
• Rthjc, Typ, Rect 1/3 Ph., (k/w): 1.4
• Vces, Inv 3 - Ph., (v): 1200
• Ic25, Tc = 25°c, Inv 3 - Ph., (a): 19
• Ic80, Tc = 80°c, Inv 3 - Ph., (a): 13
• Vce(sat), Typ, Tj = 25°c, Inv 3 - Ph., (v): 3.00
• Rthjc, Typ, Inv 3 - Ph., (k/w): 1.35
• Vces, Br Chopper, (v): 1200
• Ic80, Tc = 80°c, Br Chopper, (a): 13
• Rthjc, Typ, Br Chopper, (k/w): 1.35
• Package Style: E1
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions and dimensions.
© 2007 IXYS All rights reserved
Symbol
V
V
V
I
I
P
V
V
I
I
C
Q
t
t
t
t
E
E
I
t
(SCSOA)
R
R
Symbol
V
I
I
V
I
t
E
R
R
Ouput Inverter T1 - T6
C25
C80
CES
GES
d(on)
r
d(off)
f
CM
SC
Output Inverter D1 - D6
F25
F80
RM
rr
GES
GEM
GE(th)
CES
tot
CE(sat)
ies
on
off
thJC
thCH
RRM
F
rec(off)
thJC
thCH
G(on)
Definitions
collector emitter voltage
max. DC gate voltage
max. transient collector gate voltage
collector current
total power dissipation
collector emitter saturation voltage
gate emitter threshold voltage
collector emitter leakage current
gate emitter leakage current
input capacitance
total gate charge
turn-on delay time
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
reverse bias safe operating area
short circuit safe operating area
thermal resistance junction to case
thermal resistance case to heatsink
Definitions
max. repetitve reverse voltage
forward current
forward voltage
max. reverse recovery current
reverse recovery time
reverse recovery energy
thermal resistance junction to case
thermal resistance case to heatsink
Conditions
continuous
transient
I
I
V
V
V
V
inductive load
V
V
RBSOA; V
L = 00 µH; clamped induct. load T
V
V
R
(per IGBT)
(per IGBT)
Conditions
I
V
di
(per diode)
(per diode)
I
C
C
F
F
CE
CE
CE
CE
CE
GE
CEmax
CE
R
G
F
= 30 A; V
= 5 A; V
= 0.35 mA; V
= 5 A; V
/dt = -400 A/µs
= 600 V
= 82 W; non-repetitive
= V
= 0 V; V
= 25 V; V
= 600 V; V
= 600 V; I
= ±5 V; R
= 720 V; V
= V
CES
CES
; V
GE
GE
GE
GE
GE
GE
GE
= ±5 V; R
- L
C
= 0 V
= 5 V
GE
GE
= 0 V
G
= ±20 V
= 0 V
= 0 A
GE
= 0 V; f =  MHz
S
= 82 W
= 5 V; I
·di/dt
= ±5 V;
= V
CE
G
C
= 82 W
T
= 0 A
VJ
= 25°C to 50°C
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
C
C
C
VJ
VJ
VJ
VJ
VJ
VJ
VJ
VJ
VJ
C
C
VJ
VJ
VJ
C
= 25°C unless otherwise stated
= 25°C
= 80°C
= 25°C
= 25°C
= 25°C
= 25°C
= 25°C
= 25°C
= 25°C
= 25°C
= 50°C
= 25°C
= 80°C
= 25°C
= 25°C
= 00°C
= 25°C
MUBW15-12A6K
min.
min.
4.5
0.55
Ratings
typ.
Ratings
typ.
600
290
30
3.0
3.5
.3
.2
.
0.5
2.3
tbd
45
50
40
60
26
0
6
max.
200
max.
200
.35
±20
±30
00
3.4
6.5
0.6
3.4
.6
9
3
90
26
7
20073a
2 - 9
Unit
Unit
K/W
K/W
K/W
K/W
mA
mA
mJ
mJ
nC
nA
pF
ns
ns
ns
ns
µs
ns
µJ
W
V
V
V
A
A
V
V
V
A
V
A
A
V
V
A