MUBW15-12A6K IXYS, MUBW15-12A6K Datasheet - Page 6

• Manufacturer Part Number: MUBW15-12A6K
• Description: MODULE IGBT CBI E1
• Manufacturer: IXYS
• Type: Converter/Brake/Inv (CBI) IGBT Modulesr

Specifications of MUBW15-12A6K

• Igbt Type: NPT
• Configuration: Three Phase Inverter with Brake
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.4V @ 15V, 15A
• Current - Collector (ic) (max): 19A
• Current - Collector Cutoff (max): 600µA
• Input Capacitance (cies) @ Vce: 0.6nF @ 25V
• Power - Max: 90W
• Input: Three Phase Bridge Rectifier
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: E1
• Mounting Style: Screw
• Product: Power Semiconductor Modules
• Reverse Voltage: 1.6 KV
• Vrrm, Rect 1/3 Ph., (v): 1600
• Idavm, Tc = 80°c, Rect 1/3 Ph., (a): 89
• Rthjc, Typ, Rect 1/3 Ph., (k/w): 1.4
• Vces, Inv 3 - Ph., (v): 1200
• Ic25, Tc = 25°c, Inv 3 - Ph., (a): 19
• Ic80, Tc = 80°c, Inv 3 - Ph., (a): 13
• Vce(sat), Typ, Tj = 25°c, Inv 3 - Ph., (v): 3.00
• Rthjc, Typ, Inv 3 - Ph., (k/w): 1.35
• Vces, Br Chopper, (v): 1200
• Ic80, Tc = 80°c, Br Chopper, (a): 13
• Rthjc, Typ, Br Chopper, (k/w): 1.35
• Package Style: E1
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions and dimensions.
© 2007 IXYS All rights reserved
Z
P
I
F
thJC
tot
160
120
K/W
1.6
1.2
0.8
0.4
0.0
W
80
60
40
20
80
40
0.001
A
0
0
0.0
0
Fig.  Forward current versus
Fig. 4 Power dissipation versus direct output current
Fig. 6 Transient thermal impedance junction to case
T
T
0.6
voltage drop per diode
20
and ambient temperature, sin 80°
VJ
VJ
= 125°C
= 25°C
1.2
40
0.01
V
F
1.8
60
V
I
D(AV)M
2.4
80
A
0.1
I
FSM
200
150
100
A
0
50
0.001
0
Fig. 2 Surge overload current
20
50Hz, 80% V
40
0.01
60
RRM
1
80 100 120 140
T
T
T
VJ
VJ
amb
0.1
= 45°C
= 150°C
t
R
0.2 K/W
0.5 K/W
0.8 K/W
1.5 K/W
t
thA
3 K/W
5 K/W
8 K/W
s
MUBW15-12A6K
:
s
°C
1
10
I
D(AV)
I
2
t
100
10
A
10
80
60
40
20
A
2
0
s
3
2
1
0
MUBW15-12A6K
Fig. 3 I
Fig. 5 Max. forward current
20 40 60 80 100 120 140
vs. case temperature
2
t versus time per diode
2
T
VJ
= 45°C
3
T
VJ
4 5 6 7 8 9
= 150°C
T
C
t
20073a
ms
6 - 9
°C
10