MUBW10-12A7 IXYS, MUBW10-12A7 Datasheet - Page 7

• Manufacturer Part Number: MUBW10-12A7
• Description: CONVERTER/BRAKE/INVERTER 2.3VCE
• Manufacturer: IXYS

Specifications of MUBW10-12A7

• Igbt Type: NPT
• Configuration: Three Phase Inverter with Brake
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 10A
• Current - Collector (ic) (max): 20A
• Current - Collector Cutoff (max): 600µA
• Input Capacitance (cies) @ Vce: 0.6nF @ 25V
• Power - Max: 105W
• Input: Three Phase Bridge Rectifier
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: E2
• Vrrm, Rect 1/3 Ph., (v): 1600
• Idavm, Tc = 80°c, Rect 1/3 Ph., (a): 18
• Rthjc, Typ, Rect 1/3 Ph., (k/w): 1.47
• Vces, Inv 3 - Ph., (v): 1200
• Ic25, Tc = 25°c, Inv 3 - Ph., (a): 20
• Ic80, Tc = 80°c, Inv 3 - Ph., (a): 15
• Vce(sat), Typ, Tj = 25°c, Inv 3 - Ph., (v): 2.3
• Rthjc, Typ, Inv 3 - Ph., (k/w): 1.2
• Vces, Br Chopper, (v): 1200
• Ic80, Tc = 80°c, Br Chopper, (a): 15
• Rthjc, Typ, Br Chopper, (k/w): 1.2
• Package Style: E2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MUBW1012A7

© 2002 IXYS All rights reserved
Output Inverter T1 - T6 / D1 - D6
E
E
I
CM
on
on
2.0
1.5
1.0
0.5
0.0
25
20
15
10
mJ
mJ
A
4
3
2
1
0
5
0
0
0
0
Fig. 13 Typ. turn on energy and switching
Fig. 15 Typ. turn on energy and switching
Fig. 17 Reverse biased safe operating area
E
V
V
I
T
R
T
V
V
R
T
C
VJ
CE
GE
VJ
on
G
CE
GE
VJ
G
= 82
200
= 600V
= ±15V
= 125°C
= 10A
= 125°C
20
= 600V
= 82
= ±15V
t
= 125°C
d(on)
5
times versus collector current
times versus gate resistor
RBSOA
400
40
t
600
r
60
10
800 1000 1200 1400
80
R
15
G
100
I
C
V
120
CE
20
t
E
t
d(on)
r
on
A
140
80
ns
60
40
20
0
100
75
50
25
0
ns
V
t
t
7 - 8
E
E
Z
0.0001
thJC
off
off
0.001
0.01
K/W
1.2
0.8
0.4
0.0
mJ
0.1
0.00001 0.0001 0.001
mJ
10
4
3
2
1
0
1
0
0
Fig. 14 Typ. turn off energy and switching
V
V
I
T
Fig.16 Typ. turn off energy and switching
Fig. 18 Typ. transient thermal impedance
C
V
V
R
T
VJ
CE
GE
E
VJ
CE
GE
G
off
= 600V
= ±15V
= 10A
= 125°C
20
= 82
= 600V
= ±15V
= 125°C
5
times versus collector current
times versus gate resistor
40
single pulse
60
10
0.01
MUBW 10-12 A7
80
R
15
0.1
G
100
I
C
t
120
1
20
MUBW1012A7
t
t
d(off)
f
diode
t
IGBT
t
E
d(off)
s
f
A
off
140
10
400
300
200
100
0
600
400
200
0
ns
ns
t
t
B4