MUBW10-12A7 IXYS, MUBW10-12A7 Datasheet - Page 8

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MUBW10-12A7

Manufacturer Part Number
MUBW10-12A7
Description
CONVERTER/BRAKE/INVERTER 2.3VCE
Manufacturer
IXYS
Datasheet

Specifications of MUBW10-12A7

Igbt Type
NPT
Configuration
Three Phase Inverter with Brake
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
2.7V @ 15V, 10A
Current - Collector (ic) (max)
20A
Current - Collector Cutoff (max)
600µA
Input Capacitance (cies) @ Vce
0.6nF @ 25V
Power - Max
105W
Input
Three Phase Bridge Rectifier
Ntc Thermistor
Yes
Mounting Type
Chassis Mount
Package / Case
E2
Vrrm, Rect 1/3 Ph., (v)
1600
Idavm, Tc = 80°c, Rect 1/3 Ph., (a)
18
Rthjc, Typ, Rect 1/3 Ph., (k/w)
1.47
Vces, Inv 3 - Ph., (v)
1200
Ic25, Tc = 25°c, Inv 3 - Ph., (a)
20
Ic80, Tc = 80°c, Inv 3 - Ph., (a)
15
Vce(sat), Typ, Tj = 25°c, Inv 3 - Ph., (v)
2.3
Rthjc, Typ, Inv 3 - Ph., (k/w)
1.2
Vces, Br Chopper, (v)
1200
Ic80, Tc = 80°c, Br Chopper, (a)
15
Rthjc, Typ, Br Chopper, (k/w)
1.2
Package Style
E2
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
MUBW1012A7

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MUBW10-12A7
Manufacturer:
SEMIKRON
Quantity:
530
Part Number:
MUBW10-12A7
Quantity:
60
© 2002 IXYS All rights reserved
Brake Chopper T7 / D7
E
Z
I
off
0.0001
C
thJC
0.001
0.01
K/W
2.5
2.0
1.5
1.0
0.5
0.0
0.1
mJ
30
25
20
15
10
0.00001 0.0001 0.001
10
A
5
0
1
0
0
Fig. 19 Typ. output characteristics
Fig. 21 Typ. turn off energy and switching
Fig. 23 Typ. transient thermal impedance
V
V
R
T
CE
GE
VJ
G
= 600V
= 82
= ±15V
= 125°C
1
4
times versus collector current
single pulse
T
VJ
= 25°C
2
8
t
d(off)
E
0.01
off
3
12
V
T
0.1
CE
4
VJ
I
C
= 125°C
t
16
V
GE
5
1
= 15V
t
f
A
diode
IGBT
V
s
20
6
10
500
400
300
200
100
0
ns
t
8 - 8
R
E
10000
off
I
F
1000
100
1.2
0.8
0.4
0.0
mJ
30
25
20
15
10
A
5
0
0
0
0
Fig. 20 Typ. forward characteristics of
Fig. 22 Typ. turn off energy and switching
Fig. 24 Typ. thermistorresistance versus
Temperature Sensor NTC
V
V
I
T
C
VJ
CE
GE
E
off
= 600V
= ±15V
= 20A
= 125°C
20
25
free wheeling diode
times versus gate resistor
temperature
1
40
50
T
VJ
60
= 125°C
75
2
MUBW 10-12 A7
80
V
100
F
100
T
3
R
G
125
T
120
VJ
MUBW1012A7
= 25°C
V
t
t
d(off)
f
°C
140
150
4
600
400
200
0
ns
t
B4

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