IXBN75N170 IXYS, IXBN75N170 Datasheet - Page 2

• Manufacturer Part Number: IXBN75N170
• Description: IGBT BIMOSFET 1700V 145A SOT227B
• Manufacturer: IXYS
• Series: BIMOSFET™r

Specifications of IXBN75N170

• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 1700V
• Vce(on) (max) @ Vge, Ic: 3.1V @ 15V, 75A
• Current - Collector (ic) (max): 145A
• Current - Collector Cutoff (max): 25µA
• Input Capacitance (cies) @ Vce: 6.93nF @ 25V
• Power - Max: 625W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Vces, (v): 1700
• Ic25, Tc=25°c, (a): 145
• Ic90, Tc=90°c, (a): -
• Vce(sat), Typ, Tj=25°c, (v): 3.1
• Tf Typ, Tj=25°c, (ns): 440
• Gate Drive, (v): -
• Rthjc, Max, (k/w): 0.2
• Package Style: SOT-227B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Details

IXYS MOSFETs and IGBTs are covered
by one or moreof the following U.S. patents: 4,850,072
Symbol Test Conditions
(T
g
C
C
C
Q
Q
Q
t
t
t
t
t
t
t
t
R
R
Reverse Diode
Symbol Test Conditions
(T
V
t
I
Q
Note
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
RM
d(on)
r
d(off)
f
d(on)
r
d(off)
f
rr
fS
F
ies
oes
res
thJC
thCS
g
ge
gc
RM
J
J
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
= 25°C Unless Otherwise Specified)
= 25°C Unless Otherwise Specified)
1. Pulse test, t
Resistive load, T
I
R
Resistive load, T
I
R
I
V
I
V
I
I
C
C
F
C
C
F
R
CE
G
G
= 37V, V
= I
= I
= I
= I
= I
= 100V, V
= 1Ω, V
= 1Ω, V
PRELIMINARY TECHNICAL INFORMATION
= 25V, V
C90
C90
C90
C90
C90
, V
, V
, V
, V
, V
≤
GE
GE
GE
GE
CE
GE
CE
CE
300μs, duty cycle, d
= 15V, V
= 15V
= 15V
= 10V, Note 1
GE
= 0V, Note 1
GE
= 0V, -di
= 0.5 • V
= 0.5 • V
= 0V, f = 1MHz
= 0V
4,835,592
4,881,106
J
J
= 25°C
= 125°C
CE
F
CES
CES
/dt = 100A/μs
= 0.5 • V
4,931,844
5,017,508
5,034,796
≤
CES
2%.
5,049,961
5,063,307
5,187,117
Min.
34
Characteristic Values
5,237,481
5,381,025
5,486,715
Min.
Characteristic Values
6930
0.05
Typ.
6,162,665
150
350
160
6,259,123 B1
6,306,728 B1
400
160
260
440
230
260
580
56
38.2
50
46
47
Typ.
1.5
50
Max.
0.20 °C/W
6,404,065 B1
6,534,343
6,583,505
Max
3.0
°C/W
nC
nC
μC
nC
pF
pF
pF
ns
ns
ns
ns
ns
ns
ns
μs
ns
V
A
S
6,683,344
6,710,405 B2 6,759,692
6,710,463
SOT-227B miniBLOC (IXBN)
6,727,585
6,771,478 B2 7,071,537
IXBN75N170
7,005,734 B2
7,063,975 B2
7,157,338B2