IXBN75N170 IXYS, IXBN75N170 Datasheet - Page 3

• Manufacturer Part Number: IXBN75N170
• Description: IGBT BIMOSFET 1700V 145A SOT227B
• Manufacturer: IXYS
• Series: BIMOSFET™r

Specifications of IXBN75N170

• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 1700V
• Vce(on) (max) @ Vge, Ic: 3.1V @ 15V, 75A
• Current - Collector (ic) (max): 145A
• Current - Collector Cutoff (max): 25µA
• Input Capacitance (cies) @ Vce: 6.93nF @ 25V
• Power - Max: 625W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Vces, (v): 1700
• Ic25, Tc=25°c, (a): 145
• Ic90, Tc=90°c, (a): -
• Vce(sat), Typ, Tj=25°c, (v): 3.1
• Tf Typ, Tj=25°c, (ns): 440
• Gate Drive, (v): -
• Rthjc, Max, (k/w): 0.2
• Package Style: SOT-227B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Details

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160
140
120
100
160
140
120
100
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
80
60
40
20
80
60
40
20
0
0
0.0
0.0
5
0.5
0.5
7
9
1.0
Fig. 5. Collector-to-Emitter Voltage
1.0
Fig. 3. Output Characteristics
Fig. 1. Output Characteristics
vs. Gate-to-Emitter Voltage
37.5A
11
1.5
1.5
I
75A
C
= 150A
13
2.0
V
2.0
V
V
@ 125ºC
@ 25ºC
CE
CE
GE
V
- Volts
15
- Volts
- Volts
GE
= 25V
2.5
2.5
13V
11V
19V
15V
17
V
GE
= 25V
3.0
3.0
19V
15V
13V
11V
19
3.5
3.5
9V
7V
21
T
J
9V
7V
5V
= 25ºC
4.0
4.0
23
4.5
4.5
25
320
280
240
200
160
120
200
180
160
140
120
100
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
80
40
80
60
40
20
0
0
4.0
-50
0
V
V
GE
GE
4.5
2
= 25V
= 15V
-25
17V
15V
13V
Fig. 2. Extended Output Characteristics
5.0
4
Fig. 4. Dependence of V
0
5.5
7V
11V
9V
Fig. 6. Input Admittance
Junction Temperature
6
T
6.0
J
25
- Degrees Centigrade
T
J
= 125ºC
V
@ 25ºC
V
8
6.5
- 40ºC
I
CE
GE
25ºC
C
= 150A
50
- Volts
- Volts
I
IXBN75N170
C
7.0
10
= 75A
I
C
= 37.5A
75
7.5
CE(sat)
12
8.0
100
on
14
IXYS REF: B_75N170(8T)7-01-09
8.5
125
16
9.0
150
9.5
18