MUBW15-12A7 IXYS, MUBW15-12A7 Datasheet - Page 2

• Manufacturer Part Number: MUBW15-12A7
• Description: MODULE IGBT CBI E2
• Manufacturer: IXYS

Specifications of MUBW15-12A7

• Configuration: Three Phase Inverter with Brake
• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.6V @ 15V, 15A
• Current - Collector (ic) (max): 35A
• Current - Collector Cutoff (max): 900µA
• Input Capacitance (cies) @ Vce: 1nF @ 25V
• Power - Max: 180W
• Input: Three Phase Bridge Rectifier
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: E2
• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Gate To Emitter Voltage (max): ±20V
• Package Type: E2-Pack
• Pin Count: 24
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Vrrm, Rect 1/3 Ph., (v): 1600
• Idavm, Tc = 80°c, Rect 1/3 Ph., (a): 24
• Rthjc, Typ, Rect 1/3 Ph., (k/w): 1.3
• Vces, Inv 3 - Ph., (v): 1200
• Ic25, Tc = 25°c, Inv 3 - Ph., (a): 35
• Ic80, Tc = 80°c, Inv 3 - Ph., (a): 25
• Vce(sat), Typ, Tj = 25°c, Inv 3 - Ph., (v): 2.1
• Rthjc, Typ, Inv 3 - Ph., (k/w): 0.7
• Vces, Br Chopper, (v): 1200
• Ic80, Tc = 80°c, Br Chopper, (a): 15
• Rthjc, Typ, Br Chopper, (k/w): 1.2
• Package Style: E2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol
V
V
V
I
I
RBSOA
t
(SCSOA)
P
Symbol
V
V
I
I
t
t
t
t
E
E
C
Q
R
Symbol
I
I
Symbol
V
I
t
R
2 - 8
Output Inverter T1 - T6
C25
C80
CES
GES
Output Inverter D1 - D6
F25
F80
RM
SC
d(on)
r
d(off)
f
rr
CES
GES
GEM
tot
CE(sat)
GE(th)
on
off
F
ies
thJC
thJC
Gon
Conditions
T
Continuous
Transient
T
T
V
Clamped inductive load; L = 100 µH
V
non-repetitive
T
Conditions
I
I
V
V
V
V
(per IGBT)
Conditions
T
T
Conditions
I
I
V
(per diode)
C
C
F
F
VJ
C
C
GE
CE
C
CE
CE
CE
CE
C
C
R
= 15 A; V
= 15 A; di
= 15 A; V
= 0.6 mA; V
= 25°C
= 80°C
= 25°C
= 80°C
= 25°C
= 600 V; V
Inductive load, T
V
V
= 25°C to 150°C
= V
= V
= 600V; V
= 0 V; V
= 25 V; V
= ± 15 V; R
CE
GE
CES
CES
= 600 V; I
= ± 15 V; R
; V
; V
GE
GE
F
GE
GE
/dt = -400 A/µs; T
GE
GE
GE
GE
= 0 V; T
= 15 V; T
GE
= ± 20 V
G
= 0 V; T
= ± 15 V; R
= 0 V; f = 1 MHz
= 15 V; I
= 0 V
= 82 Ω; T
= V
C
G
= 15 A
= 82 Ω
VJ
CE
T
T
T
VJ
VJ
= 125°C
VJ
VJ
VJ
VJ
= 25°C
= 125°C
C
= 25°C
= 25°C
= 125°C
= 125°C
G
= 15 A
VJ
= 82 Ω; T
= 125°C
VJ
(T
= 125°C
VJ
= 25°C, unless otherwise specified)
VJ
= 125°C
min.
min.
4.5
Characteristic Values
Characteristic Values
I
V
CM
CEK
Maximum Ratings
Maximum Ratings
=
1000
100
500
130
typ.
typ.
≤ V
2.1
2.3
0.9
2.3
1.8
1.8
70
70
70
16
1200
± 30
± 20
180
CES
26
17
35
25
35
10
max.
max.
200
2.6
6.5
0.9 mA
0.7 K/W
2.7
2.1 K/W
mA
µs
mJ
mJ
W
nC
nA
pF
ns
ns
ns
ns
ns
V
A
A
V
V
A
A
A
V
V
V
V
V
A
Equivalent Circuits for Simulation
Conduction
D11 - D16
Rectifier Diode (typ. at T
T1 - T6 / D1 - D6
IGBT (typ. at V
Free Wheeling Diode (typ. at T
T7 / D7
IGBT (typ. at V
Free Wheeling Diode (typ. at T
Thermal Response
D11 - D16
Rectifier Diode (typ.)
T1 - T6 / D1 - D6
IGBT (typ.)
Free Wheeling Diode (typ.)
T7 / D7
IGBT (typ.)
Free Wheeling Diode (typ.)
C
C
C
C
C
C
C
C
C
C
th1
th2
th1
th2
th2
th1
© 2004 IXYS All rights reserved
th1
th2
th1
th2
V
= 0.156 J/K; R
= 1.162 J/K; R
= 0.065 J/K; R
= 0.639 J/K; R
= 0.809 J/K; R
= 0.043 J/K; R
V
V
V
V
= 0.106 J/K; R
= 0.79 J/K; R
= 0.09 J/K; R
= 0.54 J/K; R
0
MUBW 15-12 A7
0
0
0
0
= 1.32 V; R
= 1.08 V; R
= 1.37 V; R
= 1.32 V; R
= 1.39 V; R
GE
GE
= 15 V; T
= 15 V; T
th2
th1
th2
0
th1
th2
th1
th2
th2
th1
0
0
0
0
th1
J
= 131 m Ω
= 15 m Ω
= 62 m Ω
= 30 m Ω
= 56 m Ω
= 0.239 K/W
= 0.954 K/W
= 0.462 K/W
= 125°C)
= 0.545 K/W
= 0.155 K/W
= 1.758 K/W
= 0.342 K/W
= 0.246 K/W
= 2.738 K/W
= 1.06 K/W
J
J
= 125°C)
= 125°C)
J
J
= 125°C)
= 125°C)