MUBW15-12A7 IXYS, MUBW15-12A7 Datasheet - Page 8

• Manufacturer Part Number: MUBW15-12A7
• Description: MODULE IGBT CBI E2
• Manufacturer: IXYS

Specifications of MUBW15-12A7

• Configuration: Three Phase Inverter with Brake
• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.6V @ 15V, 15A
• Current - Collector (ic) (max): 35A
• Current - Collector Cutoff (max): 900µA
• Input Capacitance (cies) @ Vce: 1nF @ 25V
• Power - Max: 180W
• Input: Three Phase Bridge Rectifier
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: E2
• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Gate To Emitter Voltage (max): ±20V
• Package Type: E2-Pack
• Pin Count: 24
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Vrrm, Rect 1/3 Ph., (v): 1600
• Idavm, Tc = 80°c, Rect 1/3 Ph., (a): 24
• Rthjc, Typ, Rect 1/3 Ph., (k/w): 1.3
• Vces, Inv 3 - Ph., (v): 1200
• Ic25, Tc = 25°c, Inv 3 - Ph., (a): 35
• Ic80, Tc = 80°c, Inv 3 - Ph., (a): 25
• Vce(sat), Typ, Tj = 25°c, Inv 3 - Ph., (v): 2.1
• Rthjc, Typ, Inv 3 - Ph., (k/w): 0.7
• Vces, Br Chopper, (v): 1200
• Ic80, Tc = 80°c, Br Chopper, (a): 15
• Rthjc, Typ, Br Chopper, (k/w): 1.2
• Package Style: E2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

8 - 8
Brake Chopper T7 / D7
E
Z
I
off
0.0001
C
thJC
0.001
0.01
K/W
2.5
2.0
1.5
1.0
0.5
0.0
0.1
mJ
30
25
20
15
10
0.00001 0.0001 0.001
10
A
5
0
1
0
0
Fig. 19 Typ. output characteristics
Fig. 21 Typ. turn off energy and switching
Fig. 23 Typ. transient thermal impedance
V
V
R
T
CE
GE
VJ
G
= 82Ω
= 600V
= ±15V
= 125°C
1
4
times versus collector current
single pulse
T
VJ
= 25°C
2
8
t
d(off)
E
0.01
off
3
12
V
T
0.1
CE
4
VJ
I
C
= 125°C
t
16
V
GE
5
1
= 15V
t
f
A
diode
IGBT
V
s
20
6
10
500
400
300
200
100
0
ns
t
R
E
10000
off
I
F
1000
100
1.2
0.8
0.4
0.0
Ω
mJ
30
25
20
15
10
A
5
0
0
0
0
Fig. 20 Typ. forward characteristics of
Fig. 22 Typ. turn off energy and switching
Fig. 24 Typ. thermistorresistance versus
Temperature Sensor NTC
V
V
I
T
C
VJ
CE
GE
E
off
= 600V
= ±15V
= 10A
= 125°C
20
25
free wheeling diode
times versus gate resistor
temperature
1
40
50
T
VJ
60
= 125°C
© 2004 IXYS All rights reserved
75
2
MUBW 15-12 A7
80
V
100
F
100
T
3
R
T
G
125
120
VJ
V
MUBW1512A7
= 25°C
t
t
d(off)
f
°C
Ω
140
150
4
600
ns
400
200
0
t