MUBW35-12A7 IXYS, MUBW35-12A7 Datasheet
MUBW35-12A7
Specifications of MUBW35-12A7
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MUBW35-12A7 Summary of contents
Page 1
... C Symbol Conditions 25° 125° 25° RRM T = 125° 100 di/dt = -20 A/µ (per diode) thJC IXYS reserves the right to change limits, test conditions and dimensions. © 2004 IXYS All rights reserved (CBI2 NTC 9 Three Phase Inverter V = 1200 V CES C25 ...
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... J/K; R th1 max 1.162 J/K; R th2 2.8 V Free Wheeling Diode (typ 0.043 J/K; R th1 C = 0.54 J/K; R th2 A ns 1.19 K/W © 2004 IXYS All rights reserved = 125° Ω 125° Ω 125° Ω 125° Ω 125° Ω ...
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... 125° 25° RRM T = 125° /dt = -400 A/µ 600 thJC © 2004 IXYS All rights reserved Maximum Ratings 1200 ± 20 ± 125° ≤ CEK CES = 82 Ω 125° 180 Characteristic Values (T = 25°C, unless otherwise specified) VJ min. typ. = 25°C 2.3 ...
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... Dimensions 0.0394" Characteristic Values min. typ. max. 4.75 5.0 5.25 kΩ 3375 K Maximum Ratings °C -40...+125 °C 150 °C -40...+125 2500 V~ 2.7 - 3.3 Nm Characteristic Values min. typ. max. 5 mΩ 0.02 K/W 180 g MUBW 35-12 A7 © 2004 IXYS All rights reserved ...
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... Power dissipation versus direct output current and ambient temperature, sin 180° 1.2 K/W 1.0 Z thJC 0.8 0.6 0.4 0.2 0.0 0.001 0.01 Fig. 6 Transient thermal impedance junction to case © 2004 IXYS All rights reserved 200 50Hz, 80% V RRM A 160 45°C FSM VJ 120 125° ...
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... Fig. 10 Typ. forward characteristics of free wheeling diode 200 400 600 -di/dt Fig. 12 Typ. turn off characteristics of free wheeling diode © 2004 IXYS All rights reserved 11V 125° 200 160 120 80 = 125° 600V 30A MUBW3512A7 0 800 1000 A/µs ...
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... Fig. 18 Typ. transient thermal impedance 600 ns t d(off) t 400 = 600V CE = ±15V GE = 47Ω G 200 = 125° 1000 ns 800 t d(off) t 600 = 600V 400 CE = ±15V GE = 35A 200 = 125° Ω 80 100 diode IGBT MUBW3512A7 ...
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... Fig. 22 Typ. turn off energy and switching times versus gate resistor Temperature Sensor NTC Ω 100 T Fig. 24 Typ. thermistorresistance versus temperature © 2004 IXYS All rights reserved T = 25° 1000 ns 750 t t d(off) 500 250 Ω 120 140 R G MUBW3512A7 125 150 °C ...