MUBW35-12A7 IXYS, MUBW35-12A7 Datasheet - Page 2

• Manufacturer Part Number: MUBW35-12A7
• Description: MODULE IGBT CBI E2
• Manufacturer: IXYS

Specifications of MUBW35-12A7

• Igbt Type: NPT
• Configuration: Three Phase Inverter with Brake
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.1V @ 15V, 35A
• Current - Collector (ic) (max): 50A
• Current - Collector Cutoff (max): 1.1mA
• Input Capacitance (cies) @ Vce: 1.65nF @ 25V
• Power - Max: 225W
• Input: Three Phase Bridge Rectifier
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: E2
• Vrrm, Rect 1/3 Ph., (v): 1600
• Idavm, Tc = 80°c, Rect 1/3 Ph., (a): 29
• Rthjc, Typ, Rect 1/3 Ph., (k/w): 1.06
• Vces, Inv 3 - Ph., (v): 1200
• Ic25, Tc = 25°c, Inv 3 - Ph., (a): 50
• Ic80, Tc = 80°c, Inv 3 - Ph., (a): 35
• Vce(sat), Typ, Tj = 25°c, Inv 3 - Ph., (v): 2.6
• Rthjc, Typ, Inv 3 - Ph., (k/w): 0.55
• Vces, Br Chopper, (v): 1200
• Ic80, Tc = 80°c, Br Chopper, (a): 25
• Rthjc, Typ, Br Chopper, (k/w): 0.7
• Package Style: E2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol
V
V
V
I
I
RBSOA
t
(SCSOA)
P
Symbol
V
V
I
I
t
t
t
t
E
E
C
Q
R
Symbol
I
I
Symbol
V
I
t
R
2 - 8
Output Inverter T1 - T6
C25
C80
CES
GES
Output Inverter D1 - D6
F25
F80
RM
SC
d(on)
r
d(off)
f
rr
CES
GES
GEM
tot
CE(sat)
GE(th)
on
off
F
ies
thJC
thJC
Gon
Conditions
T
Continuous
Transient
T
T
V
Clamped inductive load; L = 100 µH
V
non-repetitive
T
Conditions
I
I
V
V
V
V
(per IGBT)
Conditions
T
T
Conditions
I
I
V
(per diode)
C
C
F
F
VJ
C
C
GE
CE
C
CE
CE
CE
CE
C
C
R
= 35 A; V
= 30 A; di
= 35 A; V
= 1 mA; V
= 25°C
= 80°C
= 25°C
= 80°C
= 25°C
= 600 V; V
Inductive load, T
V
V
= 25°C to 150°C
= V
= V
= 600V; V
= 0 V; V
= 25 V; V
= ± 15 V; R
CE
GE
CES
CES
= 600 V; I
= ± 15 V; R
; V
; V
GE
GE
F
GE
GE
GE
/dt = -500 A/µs; T
GE
GE
GE
GE
= 0 V; T
= 15 V; T
= ± 20 V
G
= V
= 0 V; T
= ± 15 V; R
= 0 V; f = 1 MHz
= 15 V; I
= 0 V
= 47 Ω; T
C
G
CE
= 35 A
= 47 Ω
VJ
T
T
T
VJ
VJ
= 125°C
VJ
VJ
VJ
VJ
= 25°C
= 125°C
C
= 25°C
= 25°C
= 125°C
= 125°C
VJ
G
= 35 A
= 47 Ω; T
= 125°C
VJ
(T
= 125°C
VJ
= 25°C, unless otherwise specified)
VJ
= 125°C
min.
min.
4.5
Characteristic Values
Characteristic Values
V
I
CM
CEK
Maximum Ratings
Maximum Ratings
=
1650
100
500
120
150
typ.
typ.
≤ V
2.6
2.9
5.3
3.9
1.8
70
70
27
1200
± 30
± 20
1
225
CES
50
35
70
10
50
33
max.
max.
0.55 K/W
1.19 K/W
200
3.1
6.5
1.1 mA
2.8
mA
µs
mJ
mJ
W
nC
nA
pF
ns
ns
ns
ns
ns
V
V
V
A
A
A
A
A
V
V
V
V
V
A
Equivalent Circuits for Simulation
Conduction
D11 - D16
Rectifier Diode (typ. at T
T1 - T6 / D1 - D6
IGBT (typ. at V
Free Wheeling Diode (typ. at T
T7 / D7
IGBT (typ. at V
Free Wheeling Diode (typ. at T
Thermal Response
D11 - D16
Rectifier Diode (typ.)
T1 - T6 / D1 - D6
IGBT (typ.)
Free Wheeling Diode (typ.)
T7 / D7
IGBT (typ.)
Free Wheeling Diode (typ.)
C
C
C
C
C
C
C
C
C
C
th1
th2
th1
th1
th2
th1
th2
th1
© 2004 IXYS All rights reserved
th2
th2
= 0.131 J/K; R
= 0.839 J/K; R
= 0.201 J/K; R
= 0.116 J/K; R
= 0.879 J/K; R
= 0.156 J/K; R
= 1.162 J/K; R
= 0.043 J/K; R
V
V
V
V
= 1.25 J/K; R
= 0.54 J/K; R
V
0
MUBW 35-12 A7
0
0
0
0
= 1.37 V; R
= 0.96 V; R
= 1.13 V; R
= 1.39 V; R
= 1.26V; R
GE
GE
= 15 V; T
= 15 V; T
th2
th2
0
th1
th2
th1
th1
th2
th1
th2
th1
0
0
0
0
J
= 15 m Ω
= 13 m Ω
= 50 m Ω
= 56 m Ω
= 0.131 K/W
= 0.462 K/W
= 125°C)
= 62 m Ω
= 0.851 K/W
= 0.209 K/W
= 0.419 K/W
= 0.973 K/W
= 0.217 K/W
= 0.545 K/W
= 0.155 K/W
= 2.738 K/W
J
J
= 125°C)
= 125°C)
J
J
= 125°C)
= 125°C)